Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics

2010 International Power Electronics Conference - ECCE Asia -, IPEC 2010

Volumn , Issue , 2010, Pages 164-169

  Chen, Zheng ^a   Boroyevich, Dushan ^a   Burgos, Rolando ^b  

^a Virginia Polytechnic Institute and State University   (United States)

^b ABB INC   (United States)

Author keywords

Parametric study; Parasitic inductance; Power MOSFET; Switching characteristics

Indexed keywords

ELECTROMAGNETIC INTERFERENCE; HIGH-SPEED SWITCHING; MOS-FET; PARAMETRIC STUDY; PARASITIC INDUCTANCES; POWER MOSFET; STRAY INDUCTANCES; SWITCHING CHARACTERISTICS; SWITCHING LOSS; SWITCHING WAVEFORMS; WAVE FORMS;

CHOPPERS (CIRCUITS); ELECTRIC SWITCHGEAR; ELECTROMAGNETIC PULSE; INDUCTANCE; MOSFET DEVICES; POWER ELECTRONICS;

SWITCHING;

EID: 77956504374     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPEC.2010.5543851     Document Type: Conference Paper

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