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Journal of Electroceramics

Volumn 31, Issue 3-4, 2013, Pages 338-344

Growth characteristics and film properties of gallium doped zinc oxide prepared by atomic layer deposition

(2) Maeng, W J a Park, Jin Seong b

a UNIVERSITY OF WISCONSIN MADISON (United States)

b Hanyang University (South Korea)

Author keywords

Atomic layer deposition; Ga doped ZnO; Gallium isopropoxide; Transparent Conduction Oxide (TCO)

Indexed keywords

DEPOSITION TEMPERATURES; GA-DOPED ZNO; GALLIUM DOPED ZINC OXIDES; GROWTH CHARACTERISTIC; HIGH GROWTH RATE; ISO-PROPOXIDE; STRUCTURAL AND OPTICAL PROPERTIES; TRANSPARENT CONDUCTION OXIDE (TCO);

CARRIER CONCENTRATION; DEPOSITION; ELECTRIC PROPERTIES; FILM GROWTH; SEMICONDUCTOR DOPING; ZINC OXIDE;

ATOMIC LAYER DEPOSITION;

EID: 84890431905 PISSN: 13853449 EISSN: 15738663 Source Type: Journal
DOI: 10.1007/s10832-013-9848-2 Document Type: Article

Times cited : (24)

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