Effect of gas adsorption on the surface structure of β-Ga2O3 studied by XPS and conductivity measurements

Sensors and Actuators, B: Chemical

Volumn 48, Issue 1-3, 1998, Pages 373-375

  Josepovits, V K ^a   Krafcsik, O ^a   Kiss, G ^a   Perczel, I V ^a  

^a TU Institute of Building Constructions and Sanitary Engineering Budapest   (Hungary)

Author keywords

Conductivity measurements; Gas adsorption; ga2O3

Indexed keywords

BINDING ENERGY; ELECTRIC CONDUCTIVITY; ELECTRIC CONDUCTIVITY MEASUREMENT; GALLIUM; GAS ADSORPTION; IONS; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

NEGATIVE SECONDARY ION; OXIDE SEMICONDUCTOR; POTENTIAL BARRIER;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032064846     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(98)00073-2     Document Type: Article

References (4)

1. G. Kiss et al., 10th European Conf. on Solid State Transducers (Eurosensors X), 1996.
2. G. Sberveglieri, et al., Thin Solid Films 186 (1990) 349-360.
3. V.K. Josepovits et al., Fifteenth General Conference of the Condensed Matter Division (1996).
4. D. Briggs, M.P. Seah, Practical Surface Analysis, vol. 1, Wiley, New York, 1990, p. 609.