SCOPUS 정보 검색 플랫폼

Journal of Electroceramics

Volumn 29, Issue 1, 2012, Pages 12-22

Optical and photoluminescence properties of Ga doped ZnO nanostructures by sol-gel method

(4) Phan, D T a Farag, A A M b Yakuphanoglu, F c Chung, G S a

a University of Ulsan (South Korea)

b Ain Shams University (Egypt)

c FIRAT UNIVERSITY (Turkey)

Author keywords

Ga doped ZnO; nanorods; Optical dispersion; Photoluminscence

Indexed keywords

DISPERSION ENERGIES; DOPANT CONTENT; GA DOPANTS; GA-DOPED ZNO; HIGH TRANSPARENCY; HIGH-FREQUENCY DIELECTRICS; LUMINESCENCE PROPERTIES; MORPHOLOGICAL PROPERTIES; OPTICAL DISPERSION; OPTICAL PARAMETER; OSCILLATOR ENERGY; PHOTOLUMINESCENCE PROPERTIES; PHOTOLUMINSCENCE; REFRACTIVE INDEX DISPERSION; SINGLE-OSCILLATOR MODEL; SOL-GEL TECHNIQUE; TRANSMITTANCE SPECTRA; UV-VISIBLE ABSORPTION; ZINC OXIDE (ZNO); ZNO; ZNO NANOROD;

ATOMIC FORCE MICROSCOPY; DISPERSIONS; GALLIUM; NANOCRYSTALLITES; NANORODS; PERMITTIVITY; PHOTOLUMINESCENCE; REFRACTIVE INDEX; SEMICONDUCTOR DOPING; SOL-GEL PROCESS; SOL-GELS; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 84865225884 PISSN: 13853449 EISSN: 15738663 Source Type: Journal
DOI: 10.1007/s10832-012-9731-6 Document Type: Article

Times cited : (27)

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