Electrical characteristics of Ga 2O 3-TiO 2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications

Applied Physics Letters

Volumn 87, Issue 8, 2005, Pages

  Seong, Nak Jin ^a   Yoon, Soon Gil ^a   Lee, Won Jae ^b  

^a Chungnam National University   (South Korea)

^b Dong Eui University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURE; INTERFACIAL CHARGE DENSITY; PLASMA-ENHANCED ATOMIC-LAYER DEPOSITION;

ANNEALING; CAPACITORS; CRYSTALLIZATION; CURRENT DENSITY; DEPOSITION; FILM GROWTH; GALLIUM COMPOUNDS; GATES (TRANSISTOR); LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; PERMITTIVITY; SUBSTRATES; THERMODYNAMIC STABILITY; TITANIUM DIOXIDE;

THICK FILMS;

EID: 24344434579     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2034100     Document Type: Article

References (18)

1. W. J. Qi, R. Nieh, B. H. Lee, L. G. Kang, Y. J. Jeon, and J. C. Lee, Appl. Phys. Lett. 77, 3269 (2000).
2. T. S. Jeon, J. M. White, and D. L. Kwong, Appl. Phys. Lett. 78, 368 (2001).
3. S. J. Wang, C. K. Ong, S. Y. Xu, P. Chen, W. C. Tjiu, J. W. Chai, A. C. H. Huan, W. J. Yoo, J. S. Lim, W. Feng, and W. K. Choi, Appl. Phys. Lett. 78, 1604 (2001).
4. B. H. Lee, L. G. Kang, R. Nieh, W. J. Qi, and J. C. Lee, Appl. Phys. Lett. 76, 1926 (2000).
5. K. J. Choi, W. C. Shin, and S. G. Yoon, J. Electrochem. Soc. 149, F18 (2002).
6. K. J. Choi, J. B. Park, and S. G. Yoon, J. Electrochem. Soc. 150, F75 (2003).
7. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 76, 112 (2000).
8. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2000).
9. O. Auciello, W. Fan, B. Kabius, S. Saha, J. A. Carlisle, R. P. H. Chang, C. Lopez, E. A. Irene, and R. A. Baragiola, Appl. Phys. Lett. 86, 042904 (2005).
10. P. A. Packan, Science 285, 2079 (1999).
11. M. Ritala, K. Kukli, A. Rahtu, P. I. Raisanen, M. Leskela, T. Sajavaara, and J. Keinonen, Science 288, 31 (2000).
12. T. Watanabe and H. Funakubo, Jpn. J. Appl. Phys., Part 1 39, 5211 (2000).
13. M. Leskela, L. Niinisto, T. Suntola, M. Simpson, Atomic Layer Epitaxy (Blackie, London, 1990), p. 1.
14. W. J. Lee, I. K. You, S. O. Ryu, B. G. Yu, K. I. Cho, S. G. Yoon, and C. S. Lee, Jpn. J. Appl. Phys., Part 1 40, 6941 (2001).
15. W. J. Lee, W. C. Shin, B. G. Chae, S. O. Ryu, I. K. You, S. M. Cho, B. G. Yu, and B. C. Shin, Integr. Ferroelectr. 46, 275 (2002).
16. S. Yamamoto and S. Oda, Chem. Vap. Deposition, 7, 7 (2001).
17. L. M. Terman, Solid-State Electron. 5, 285 (1962).
18. K. J. Choi, J. B. Park, and S. G. Yoon, J. Electrochem. Soc. 150, F75 (2003).