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Journal of Applied Physics

Volumn 107, Issue 7, 2010, Pages

Flat band voltage (VFB) modulation by controlling compositional depth profile in La2 O3 / HfO2 nanolaminate gate oxide

(3) Maeng, W J a Kim, Woo Hee a Kim, Hyungjun b

a Pohang University of Science and Technology (POSTECH) (South Korea)

b Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL DEPTH PROFILE; FLAT-BAND VOLTAGE; GATE OXIDE; HIGH-K GATE DIELECTRICS; INTERFACIAL LAYER; LANTHANUM OXIDE; NANO-LAMINATES; NANOLAMINATE; SI SUBSTRATES; VFB SHIFT;

DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM OXIDES; LANTHANUM OXIDES; MODULATION;

GATE DIELECTRICS;

EID: 77951575617 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3369388 Document Type: Article

Times cited : (30)

References (23)

1
- 34047264963
- Navigation aids in the search for future high-k dielectrics: Physical and electrical trends
- DOI 10.1016/j.sse.2007.02.021, PII S0038110107000652
- O. Engstrom, B. Raeissi, S. Hall, O. Buiu, M. C. Lemme, H. D. B. Gottlob, P. K. Hurley, and K. Cherkaoui, Solid-State Electron. 0038-1101 51, 622 (2007). 10.1016/j.sse.2007.02.021 (Pubitemid 46550587)
- (2007) Solid-State Electronics , vol.51 , Issue.4 SPEC. ISS. , pp. 622-626
- Engstrom, O.¹ Raeissi, B.² Hall, S.³ Buiu, O.⁴ Lemme, M.C.⁵ Gottlob, H.D.B.⁶ Hurley, P.K.⁷ Cherkaoui, K.⁸

2
- 33845419668
- Work function engineering using lanthanum oxide interfacial layers
- DOI 10.1063/1.2396918
- H. N. Alshareef, M. Quevedo-López, H. C. Wen, R. Harris, P. Kirsch, P. Majhi, B. H. Lee, R. Jammy, D. J. Lichtenwalner, J. S. Jur, and A. I. Kingon, Appl. Phys. Lett. 0003-6951 89, 232103 (2006). 10.1063/1.2396918 (Pubitemid 44907244)
- (2006) Applied Physics Letters , vol.89 , Issue.23 , pp. 232103
- Alshareef, H.N.¹ Quevedo-Lopez, M.² Wen, H.C.³ Harris, R.⁴ Kirsch, P.⁵ Majhi, P.⁶ Lee, B.H.⁷ Jammy, R.⁸ Lichtenwalner, D.J.⁹ Jur, J.S.¹⁰ Kingon, A.I.¹¹

3
- 77951551314
- IEDM'06.
- P. D. Kirsch, M. A. Quevedo-López, S. A. Krishnan, C. Krug, H. AlShareef, C. S. Park, R. Harris, N. Moumen, A. Neugroschel, and G. Bersuker, IEDM'06, 2006.
- (2006)
- Kirsch, P.D.¹ Quevedo-López, M.A.² Krishnan, S.A.³ Krug, C.⁴ Alshareef, H.⁵ Park, C.S.⁶ Harris, R.⁷ Moumen, N.⁸ Neugroschel, A.⁹ Bersuker, G.¹⁰

4
- 77951616521
- IEDM 2007.
- S. Kamiyama, T. Miura, E. Kurosawa, M. Kitajima, M. Ootuka, T. Aoyama, and Y. Nara, IEDM 2007, 2007.
- (2007)
- Kamiyama, S.¹ Miura, T.² Kurosawa, E.³ Kitajima, M.⁴ Ootuka, M.⁵ Aoyama, T.⁶ Nara, Y.⁷

5
- 40549096055
- Dipole model explaining high-k /metal gate field effect transistor threshold voltage tuning
- DOI 10.1063/1.2890056
- P. D. Kirsch, P. Sivasubramani, J. Huang, C. D. Young, M. A. Quevedo-Lopez, H. C. Wen, H. Alshareef, K. Choi, C. S. Park, K. Freeman, M. M. Hussain, G. Bersuker, H. R. Harris, P. Majhi, R. Choi, P. Lysaght, B. H. Lee, H. H. Tseng, R. Jammy, T. S. Boscke, D. J. Lichtenwalner, J. S. Jur, and A. I. Kingon, Appl. Phys. Lett. 0003-6951 92, 092901 (2008). 10.1063/1.2890056 (Pubitemid 351357408)
- (2008) Applied Physics Letters , vol.92 , Issue.9 , pp. 092901
- Kirsch, P.D.¹ Sivasubramani, P.² Huang, J.³ Young, C.D.⁴ Quevedo-Lopez, M.A.⁵ Wen, H.C.⁶ Alshareef, H.⁷ Choi, K.⁸ Park, C.S.⁹ Freeman, K.¹⁰ Hussain, M.M.¹¹ Bersuker, G.¹² Harris, H.R.¹³ Majhi, P.¹⁴ Choi, R.¹⁵ Lysaght, P.¹⁶ Lee, B.H.¹⁷ Tseng, H.-H.¹⁸ Jammy, R.¹⁹ Boscke, T.S.²⁰ more..

6
- 34447278109
- 0741-3106,. 10.1109/LED.2007.891757
- X. P. Wang, H. Y. Yu, M. F. Li, C. X. Zhu, S. Biesemans, A. Chin, Y. Y. Sun, Y. P. Feng, A. Lim, Y. Yee-Chia, L. Wei Yip, G. Q. Lo, and K. Dim-Lee, IEEE Electron Device Lett. 0741-3106 28, 258 (2007). 10.1109/LED.2007.891757
- (2007) IEEE Electron Device Lett. , vol.28 , pp. 258
- Wang, X.P.¹ Yu, H.Y.² Li, M.F.³ Zhu, C.X.⁴ Biesemans, S.⁵ Chin, A.⁶ Sun, Y.Y.⁷ Feng, Y.P.⁸ Lim, A.⁹ Yee-Chia, Y.¹⁰ Wei Yip, L.¹¹ Lo, G.Q.¹² Dim-Lee, K.¹³

7
- 35948958613
- 2/Si capacitors
- DOI 10.1143/JJAP.46.7251
- Y. Yamamoto, K. Kita, K. Kyuno, and A. Toriumi, Jpn. J. Appl. Phys., Part 1 0021-4922 46, 7251 (2007). 10.1143/JJAP.46.7251 (Pubitemid 350074885)
- (2007) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.46 , Issue.11 , pp. 7251-7255
- Yamamoto, Y.¹ Kita, K.² Kyuno, K.³ Toriumi, A.⁴

8
- 70350685962
- 1598-1657.
- C. Y. Kang, R. Choi, B. H. Lee, and R. Jammy, J. Semicond. Technol. Sci. 1598-1657 9, 166 (2009).
- (2009) J. Semicond. Technol. Sci. , vol.9 , pp. 166
- Kang, C.Y.¹ Choi, R.² Lee, B.H.³ Jammy, R.⁴

9
- 34548430525
- Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
- DOI 10.1063/1.2776350
- W. J. Maeng and H. Kim, Appl. Phys. Lett. 0003-6951 91, 092901 (2007). 10.1063/1.2776350 (Pubitemid 47352319)
- (2007) Applied Physics Letters , vol.91 , Issue.9 , pp. 092901
- Maeng, W.J.¹ Kim, H.²

10
- 67650578509
- 0013-4651 (), G. 10.1149/1.3147254
- W. J. Maeng, G. H. Gu, C. G. Park, K. Lee, T. Lee, and H. Kim, J. Electrochem. Soc. 0013-4651 156 (8), G 109 (2009). 10.1149/1.3147254
- (2009) J. Electrochem. Soc. , vol.156 , Issue.8 , pp. 109
- Maeng, W.J.¹ Gu, G.H.² Park, C.G.³ Lee, K.⁴ Lee, T.⁵ Kim, H.⁶

11
- 58249102069
- 0374-4884,. 10.3938/jkps.53.3334
- W. -S. Kim, S. -K. Park, D. -Y. Moon, T. -S. Kim, B. -W. Kang, J. -K. Seo, H. -D. Kim, and J. -W. Park, Journal of the Korean Physical Society 0374-4884 53, 3334 (2008). 10.3938/jkps.53.3334
- (2008) Journal of the Korean Physical Society , vol.53 , pp. 3334
- Kim, W.-S.¹ Park, S.-K.² Moon, D.-Y.³ Kim, T.-S.⁴ Kang, B.-W.⁵ Seo, J.-K.⁶ Kim, H.-D.⁷ Park, J.-W.⁸

12
- 51849101192
- 0013-4651,. 10.1149/1.2960995
- W. He, D. S. H. Chan, S. -J. Kim, Y. -S. Kim, S. -T. Kim, and B. J. Cho, J. Electrochem. Soc. 0013-4651 155, G189 (2008). 10.1149/1.2960995
- (2008) J. Electrochem. Soc. , vol.155 , pp. 189
- He, W.¹ Chan, D.S.H.² Kim, S.-J.³ Kim, Y.-S.⁴ Kim, S.-T.⁵ Cho, B.J.⁶

13
- 43049108472
- 3 capping layer
- DOI 10.1149/1.2901915
- S. Kamiyama, E. Kurosawa, and Y. Nara, J. Electrochem. Soc. 0013-4651 155, H373 (2008). 10.1149/1.2901915 (Pubitemid 351623463)
- (2008) Journal of the Electrochemical Society , vol.155 , Issue.6
- Kamiyama, S.¹ Kurosawa, E.² Nara, Y.³

14
- 32944454322
- Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon
- DOI 10.1063/1.2174840
- Y. Zhao, M. Toyama, K. Kita, K. Kyuno, and A. Toriumi, Appl. Phys. Lett. 0003-6951 88, 072904 (2006). 10.1063/1.2174840 (Pubitemid 43261834)
- (2006) Applied Physics Letters , vol.88 , Issue.7 , pp. 072904
- Zhao, Y.¹ Toyama, M.² Kita, K.³ Kyuno, K.⁴ Toriumi, A.⁵

15
- 0032679052
- 0018-9383,. 10.1109/16.772500
- K. J. Yang and H. Chenming, IEEE Trans. Electron Devices 0018-9383 46, 1500 (1999). 10.1109/16.772500
- (1999) IEEE Trans. Electron Devices , vol.46 , pp. 1500
- Yang, K.J.¹ Chenming, H.²

16
- 40549085077
- y on Si substrates with various crystal orientations
- DOI 10.1149/1.2840616
- W. J. Maeng and H. Kim, J. Electrochem. Soc. 0013-4651 155 (4), H 267 (2008). 10.1149/1.2840616 (Pubitemid 351357530)
- (2008) Journal of the Electrochemical Society , vol.155 , Issue.4
- Maeng, W.J.¹ Kim, H.²

17
- 0004277486
- (Wiley, Hoboken, New Jersey).
- E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, Hoboken, New Jersey, 2003).
- (2003) MOS Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

18
- 0035848123
- 0003-6951,. 10.1063/1.1355002
- M. Copel, E. Cartier, and F. M. Ross, Appl. Phys. Lett. 0003-6951 78, 1607 (2001). 10.1063/1.1355002
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1607
- Copel, M.¹ Cartier, E.² Ross, F.M.³

19
- 0035952884
- 0003-6951,. 10.1063/1.1357445
- H. Ono and T. Katsumata, Appl. Phys. Lett. 0003-6951 78, 1832 (2001). 10.1063/1.1357445
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1832
- Ono, H.¹ Katsumata, T.²

20
- 2942672871
- 0169-4332,. 10.1016/j.apsusc.2004.03.232
- J. B. Cheng, A. D. Li, Q. Y. Shao, H. Q. Ling, D. Wu, Y. Wang, Y. J. Bao, M. Wang, Z. G. Liu, and N. B. Ming, Appl. Surf. Sci. 0169-4332 233, 91 (2004). 10.1016/j.apsusc.2004.03.232
- (2004) Appl. Surf. Sci. , vol.233 , pp. 91
- Cheng, J.B.¹ Li, A.D.² Shao, Q.Y.³ Ling, H.Q.⁴ Wu, D.⁵ Wang, Y.⁶ Bao, Y.J.⁷ Wang, M.⁸ Liu, Z.G.⁹ Ming, N.B.¹⁰

21
- 35949027284
- 0031-9007,. 10.1103/PhysRevLett.40.972
- H. C. Siegmann, L. Schlapbach, and C. R. Brundle, Phys. Rev. Lett. 0031-9007 40, 972 (1978). 10.1103/PhysRevLett.40.972
- (1978) Phys. Rev. Lett. , vol.40 , pp. 972
- Siegmann, H.C.¹ Schlapbach, L.² Brundle, C.R.³

22
- 14644396607
- 3 as gate dielectric for sub-100 nm CMOS and DRAM technology
- DOI 10.1016/j.microrel.2004.11.021, PII S0026271404004883, 13th Workshop on Dielectrics in Microelectronics
- V. Capodieci, F. Wiest, T. Sulima, J. Schulze, and I. Eisele, Microelectron. Reliab. 0026-2714 45, 937 (2005). 10.1016/j.microrel.2004.11.021 (Pubitemid 40309069)
- (2005) Microelectronics Reliability , vol.45 , Issue.5-6 , pp. 937-940
- Capodieci, V.¹ Wiest, F.² Sulima, T.³ Schulze, J.⁴ Eisele, I.⁵

23
- 31044455312
- High dielectric constant gate oxides for metal oxide Si transistors
- DOI 10.1088/0034-4885/69/2/R02, PII S0034488506721856
- J. Robertson, Rep. Prog. Phys. 0034-4885 69, 327 (2006). 10.1088/0034-4885/69/2/R02 (Pubitemid 43121643)
- (2006) Reports on Progress in Physics , vol.69 , Issue.2 , pp. 327-396
- Robertson, J.¹

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