Graphene microwave transistors on sapphire substrates

Applied Physics Letters

Volumn 99, Issue 11, 2011, Pages

  Pallecchi, E ^a   Benz, C ^b   Betz, A C ^a   Lhneysen, H V ^b   Plaais, B ^a   Danneau, R ^a,b  

^a SORBONNE UNIVERSITÉ   (France)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE NOISE; GATE LENGTH; HIGH STABILITY; LOW TEMPERATURES; MAXIMUM OSCILLATION FREQUENCY; METAL-OXIDE; MICROWAVE TRANSISTORS; SAPPHIRE SUBSTRATES; TRANSIT FREQUENCY;

BROADBAND AMPLIFIERS; GRAPHENE; LOW NOISE AMPLIFIERS; METAL WORKING; MICROWAVE DEVICES; MONOLAYERS; SAPPHIRE; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 80053177810     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3633105     Document Type: Article

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