-
1
-
-
64549111675
-
RF performance of top-gated, zero-bandgap graphene field-effect transistors
-
I. Meric, N. Baklitskaya, P. Kim, and K. L. Shepard, "RF performance of top-gated, zero-bandgap graphene field-effect transistors, " in Proc. IEEE Int. Electron Devices Meeting, 2008, pp. 1-4.
-
(2008)
Proc IEEE Int. Electron Devices Meeting
, pp. 1-4
-
-
Meric, I.1
Baklitskaya, N.2
Kim, P.3
Shepard, K.L.4
-
2
-
-
77956939304
-
High-speed graphene transistors with a selfaligned nanowire gate
-
Sep.
-
L. Liao, Y.-C. Lin, M. Bao, R. Cheng, J. Bai, Y. Liu, Y. Qu, K. L. Wang, Y. Huang, and X. Duan, "High-speed graphene transistors with a selfaligned nanowire gate, " Nature, vol. 467, no. 7313, pp. 305-308, Sep. 2010.
-
(2010)
Nature
, vol.467
, Issue.7313
, pp. 305-308
-
-
Liao, L.1
Lin, Y.-C.2
Bao, M.3
Cheng, R.4
Bai, J.5
Liu, Y.6
Qu, Y.7
Wang, K.L.8
Huang, Y.9
Duan, X.10
-
3
-
-
76249106631
-
100-GHz transistors from wafer-scale epitaxial graphene
-
Feb.
-
Y.-M. Lin, C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H.-Y. Chiu, A. Grill, and P. Avouris, "100-GHz transistors from wafer-scale epitaxial graphene, " Science, vol. 327, no. 5966, p. 662, Feb. 2010.
-
(2010)
Science
, vol.327
, Issue.5966
, pp. 662
-
-
Lin, Y.-M.1
Dimitrakopoulos, C.2
Jenkins, K.A.3
Farmer, D.B.4
Chiu, H.-Y.5
Grill, A.6
Avouris, P.7
-
4
-
-
79953758358
-
High-frequency, scaled graphene transistors on diamondlike carbon
-
Apr.
-
Y. Wu, Y. M. Lin, A. A. Bol, K. A. Jenkins, F. Xia, D. B. Farmer, Y. Zhu, and P. Avouris, "High-frequency, scaled graphene transistors on diamondlike carbon, " Nature, vol. 472, no. 7341, pp. 74-78, Apr. 2011.
-
(2011)
Nature
, vol.472
, Issue.7341
, pp. 74-78
-
-
Wu, Y.1
Lin, Y.M.2
Bol, A.A.3
Jenkins, K.A.4
Xia, F.5
Farmer, D.B.6
Zhu, Y.7
Avouris, P.8
-
5
-
-
77955231284
-
Graphene transistors
-
Jul.
-
F. Schwierz, "Graphene transistors, " Nature Nanotechnol., vol. 5, no. 7, pp. 487-496, Jul. 2010.
-
(2010)
Nature Nanotechnol
, vol.5
, Issue.7
, pp. 487-496
-
-
Schwierz, F.1
-
6
-
-
79958719398
-
Wafer-scale graphene integrated circuit
-
Jun.
-
Y.-M. Lin, A. Valdes-Garcia, S.-J. Han, D. B. Farmer, I. Meric, Y. Sun, Y. Wu, C. Dimitrakopoulos, A. Grill, P. Avouris, and K. A. Jenkins, "Wafer-scale graphene integrated circuit, " Science, vol. 332, no. 6035, pp. 1294-1297, Jun. 2011.
-
(2011)
Science
, vol.332
, Issue.6035
, pp. 1294-1297
-
-
Lin, Y.-M.1
Valdes-Garcia, A.2
Han, S.-J.3
Farmer, D.B.4
Meric, I.5
Sun, Y.6
Wu, Y.7
Dimitrakopoulos, C.8
Grill, A.9
Avouris, P.10
Jenkins, K.A.11
-
7
-
-
57349090160
-
Current saturation in zero-bandgap, top-gated graphene field-effect transistors
-
Nov
-
I. Meric, M. Y. Han, A. F. Young, B. Ozyilmaz, P. Kim, and K. L. Shepard, "Current saturation in zero-bandgap, top-gated graphene field-effect transistors, " Nature Nanotechnol., vol. 3, no. 11, pp. 654-659, Nov. 2008.
-
(2008)
Nature Nanotechnol
, vol.3
, Issue.11
, pp. 654-659
-
-
Meric, I.1
Han, M.Y.2
Young, A.F.3
Ozyilmaz, B.4
Kim, P.5
Shepard, K.L.6
-
8
-
-
79958822497
-
Topgated chemical vapor deposition grown graphene transistors with current saturation
-
Jun.
-
J. Bai, L. Liao, H. Zhou, R. Cheng, L. Liu, Y. Huang, and X. Duan, "Topgated chemical vapor deposition grown graphene transistors with current saturation, " Nano Lett., vol. 11, no. 6, pp. 2555-2559, Jun. 2011.
-
(2011)
Nano Lett
, vol.11
, Issue.6
, pp. 2555-2559
-
-
Bai, J.1
Liao, L.2
Zhou, H.3
Cheng, R.4
Liu, L.5
Huang, Y.6
Duan, X.7
-
9
-
-
80052799190
-
High-frequency graphene voltage amplifier
-
Sep.
-
S.-J. Han, K. A. Jenkins, A. V. Garcia, A. D. Franklin, A. A. Bol, and W. Haensch, "High-frequency graphene voltage amplifier, " Nano Lett., vol. 11, no. 9, pp. 3690-3693, Sep. 2011.
-
(2011)
Nano Lett
, vol.11
, Issue.9
, pp. 3690-3693
-
-
Han, S.-J.1
Jenkins, K.A.2
Garcia, A.V.3
Franklin, A.D.4
Bol, A.A.5
Haensch, W.6
-
10
-
-
77955232280
-
Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless largearea graphene channels
-
May
-
S. A. Thiele, J. A. Schaefer, and F. Schwierz, "Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless largearea graphene channels, " J. Appl. Phys., vol. 107, no. 9, pp. 094505-1-094505-8, May 2010.
-
(2010)
J. Appl. Phys
, vol.107
, Issue.9
, pp. 0945051-0945058
-
-
Thiele, S.A.1
Schaefer, J.A.2
Schwierz, F.3
-
11
-
-
80054954449
-
Explicit drain-current model of graphene field-effect transistors targeting analog and radio-frequency applications
-
Nov.
-
D. Jiménez and O. Moldovan, "Explicit drain-current model of graphene field-effect transistors targeting analog and radio-frequency applications, " IEEE Trans. Electron Devices, vol. 58, no. 11, pp. 4049-4052, Nov. 2011.
-
(2011)
IEEE Trans. Electron Devices
, vol.58
, Issue.11
, pp. 4049-4052
-
-
Jiménez, D.1
Moldovan, O.2
-
12
-
-
84856241232
-
Ultimate RF performance potential of carbon electronics
-
Oct.
-
S. O. Koswatta, A. Valdes-Garcia, M. B. Steiner, Y.-M. Lin, and P. Avouris, "Ultimate RF performance potential of carbon electronics, " IEEE Trans. Microw. Theory Tech., vol. 59, no. 10, pp. 2739-2750, Oct. 2011.
-
(2011)
IEEE Trans. Microw. Theory Tech
, vol.59
, Issue.10
, pp. 2739-2750
-
-
Koswatta, S.O.1
Valdes-Garcia, A.2
Steiner, M.B.3
Lin, Y.-M.4
Avouris, P.5
-
13
-
-
84866926960
-
Can quasi-saturation in the output characteristics of short-channel graphene field-effect transistors be engineered?
-
University Park, PA, Jun
-
K. Ganapathi, M. Lundstrom, and S. Salahuddin, "Can quasi-saturation in the output characteristics of short-channel graphene field-effect transistors be engineered?" in Proc. Device Res. Conf., University Park, PA, Jun. 2012, pp. 85-86.
-
(2012)
Proc. Device Res. Conf.
, pp. 85-86
-
-
Ganapathi, K.1
Lundstrom, M.2
Salahuddin, S.3
-
14
-
-
84859135564
-
Three-terminal graphene negative differential resistance devices
-
Mar.
-
Y. Wu, D. B. Farmer, W. Zhu, S.-J. Han, C. D. Dimitrakopoulos, A. A. Bol, P. Avouris, and Y.-M. Lin, "Three-terminal graphene negative differential resistance devices, " ACS Nano, vol. 6, no. 3, pp. 2610-2616, Mar. 2012.
-
(2012)
ACS Nano
, vol.6
, Issue.3
, pp. 2610-2616
-
-
Wu, Y.1
Farmer, D.B.2
Zhu, W.3
Han, S.-J.4
Dimitrakopoulos, C.D.5
Bol, A.A.6
Avouris, P.7
Lin, Y.-M.8
-
15
-
-
84862849224
-
Current saturation in submicrometer graphene transistors with thin gate dielectric: Experiment, simulation, and theory
-
Mar.
-
S.-J. Han, D. Reddy, G. D. Carpenter, A. D. Franklin, and K. A. Jenkins, "Current saturation in submicrometer graphene transistors with thin gate dielectric: Experiment, simulation, and theory, " ACS Nano, vol. 6, no. 6, pp. 5220-5226, Mar. 2012.
-
(2012)
ACS Nano
, vol.6
, Issue.6
, pp. 5220-5226
-
-
Han, S.-J.1
Reddy, D.2
Carpenter, G.D.3
Franklin, A.D.4
Jenkins, K.A.5
-
16
-
-
34047273367
-
Negative differential resistance of electrons in graphene barrier
-
Apr
-
D. Dragoman andM. Dragoman, "Negative differential resistance of electrons in graphene barrier, " Appl. Phys. Lett., vol. 90, no. 14, pp. 143111-1-143111-3, Apr. 2007.
-
(2007)
Appl. Phys. Lett
, vol.90
, Issue.14
, pp. 1431111-1431113
-
-
Dragoman, D.1
Dragoman, M.2
-
17
-
-
54749105473
-
Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures
-
Sep
-
V. N. Do, V. H. Nguyen, P. Dollfus, and A. Bournel, "Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures, " J. Appl. Phys., vol. 104, no. 6, pp. 063708-1-063708-7, Sep. 2008.
-
(2008)
J. Appl. Phys
, vol.104
, Issue.6
, pp. 0637081-0637087
-
-
Do, V.N.1
Nguyen, V.H.2
Dollfus, P.3
Bournel, A.4
-
18
-
-
80052082856
-
Influence of metalgraphene contact on the operation and scalability of graphene field-effect transistors
-
Sep.
-
P. Zhao, Q. Zhang, D. Jena, and S. O. Koswatta, "Influence of metalgraphene contact on the operation and scalability of graphene field-effect transistors, " IEEE Trans. Electron Devices, vol. 58, no. 9, pp. 3170-3178, Sep. 2011.
-
(2011)
IEEE Trans. Electron Devices
, vol.58
, Issue.9
, pp. 3170-3178
-
-
Zhao, P.1
Zhang, Q.2
Jena, D.3
Koswatta, S.O.4
-
19
-
-
84866903614
-
Negative differential resistance in short-channel graphene FETs: Semianalytical model and simulations
-
University Park, PA, Jun
-
R. Grassi, T. Low, A. Gnudi, and G. Baccarani, "Negative differential resistance in short-channel graphene FETs: Semianalytical model and simulations, " in Proc. Device Res. Conf., University Park, PA, Jun. 2012, pp. 107-108.
-
(2012)
Proc. Device Res. Conf.
, pp. 107-108
-
-
Grassi, R.1
Low, T.2
Gnudi, A.3
Baccarani, G.4
-
20
-
-
77955759220
-
Inelastic scattering and current saturation in graphene
-
May
-
V. Perebeinos and P. Avouris, "Inelastic scattering and current saturation in graphene, " Phys. Rev. B, Condens. Matter Mater. Phys., vol. 81, no. 19, pp. 195442-1-195442-8, May 2010.
-
(2010)
Phys. Rev. B, Condens. Matter Mater. Phys
, vol.81
, Issue.19
, pp. 1954421-1954428
-
-
Perebeinos, V.1
Avouris, P.2
-
21
-
-
33745247160
-
Sub-Poissonian shot noise in graphene
-
Jun
-
J. Tworzydlo, B. Trauzettel, M. Titov, A. Rycerz, and C. W. J. Beenakker, "Sub-Poissonian shot noise in graphene, " Phys. Rev. Lett., vol. 96, no. 24, pp. 246802-1-246802-4, Jun. 2006.
-
(2006)
Phys. Rev. Lett
, vol.96
, Issue.24
, pp. 2468021-2468024
-
-
Tworzydlo, J.1
Trauzettel, B.2
Titov, M.3
Rycerz, A.4
Beenakker, C.W.J.5
-
22
-
-
79952586642
-
Signatures of disorder in the minimum conductivity of graphene
-
Mar.
-
Y. Sui, T. Low, M. Lundstrom, and J. Appenzeller, "Signatures of disorder in the minimum conductivity of graphene, " Nano Lett., vol. 11, no. 3, pp. 1319-1322, Mar. 2011.
-
(2011)
Nano Lett.
, vol.11
, Issue.3
, pp. 1319-1322
-
-
Sui, Y.1
Low, T.2
Lundstrom, M.3
Appenzeller, J.4
-
23
-
-
48249135493
-
Doping graphene with metal contacts
-
Jul
-
G. Giovannetti, P. A. Khomyakov, G. Brocks, V. M. Karpan, J. van den Brink, and P. J. Kelly, "Doping graphene with metal contacts, " Phys. Rev. Lett., vol. 101, no. 2, pp. 026803-1-026803-4, Jul. 2008.
-
(2008)
Phys. Rev. Lett.
, vol.101
, Issue.2
, pp. 0268031-0268034
-
-
Giovannetti, G.1
Khomyakov, P.A.2
Brocks, G.3
Karpan, V.M.4
Brink Den J.Van5
Kelly, P.J.6
-
24
-
-
33748296088
-
Chiral tunnelling and the Klein paradox in graphene
-
DOI 10.1038/nphys384, PII NPHYS384
-
M. I. Katsnelson, K. S. Novoselov, and A. K. Geim, "Chiral tunnelling and the Klein paradox in graphene, " Nature Phys., vol. 2, no. 9, pp. 620-625, Sep. 2006. (Pubitemid 44328348)
-
(2006)
Nature Physics
, vol.2
, Issue.9
, pp. 620-625
-
-
Katsnelson, M.I.1
Novoselov, K.S.2
Geim, A.K.3
-
25
-
-
67349132448
-
Conductance asymmetry of graphene p-n junction
-
Jun
-
T. Low, S. Hong, J. Appenzeller, S. Datta, and M. S. Lundstrom, "Conductance asymmetry of graphene p-n junction, " IEEE Trans. Electron Devices, vol. 56, no. 6, pp. 1292-1299, Jun. 2009.
-
(2009)
IEEE Trans. Electron Devices
, vol.56
, Issue.6
, pp. 1292-1299
-
-
Low, T.1
Hong, S.2
Appenzeller, J.3
Datta, S.4
Lundstrom, M.S.5
-
26
-
-
80053566711
-
Negative differential resistance in mono and bilayer graphene p-n junctions
-
Oct.
-
G. Fiori, "Negative differential resistance in mono and bilayer graphene p-n junctions, " IEEE Electron Device Lett., vol. 32, no. 10, pp. 1334-1336, Oct. 2011.
-
(2011)
IEEE Electron Device Lett
, vol.32
, Issue.10
, pp. 1334-1336
-
-
Fiori, G.1
-
27
-
-
79951814968
-
Full-quantum calculations of low-field channel mobility in graphene nanoribbon FETs including acoustic phonon scattering and edge roughness effects
-
Glasgow, U. K., Mar
-
I. Imperiale, R. Grassi, A. Gnudi, S. Reggiani, E. Gnani, and G. Baccarani, "Full-quantum calculations of low-field channel mobility in graphene nanoribbon FETs including acoustic phonon scattering and edge roughness effects, " in Proc. ULIS, Glasgow, U. K., Mar. 2010, pp. 57-60.
-
(2010)
Proc. ULIS
, pp. 57-60
-
-
Imperiale, I.1
Grassi, R.2
Gnudi, A.3
Reggiani, S.4
Gnani, E.5
Baccarani, G.6
-
28
-
-
79957561572
-
Role of phonon scattering in graphene nanoribbon transistors: Nonequilibrium Green's function method with real space approach
-
May
-
Y. Yoon, D. E. Nikonov, and S. Salahuddin, "Role of phonon scattering in graphene nanoribbon transistors: Nonequilibrium Green's function method with real space approach, " Appl. Phys. Lett., vol. 98, no. 20, pp. 203503-1-203503-3, May 2011.
-
(2011)
Appl. Phys. Lett
, vol.98
, Issue.20
, pp. 2035031-2035033
-
-
Yoon, Y.1
Nikonov, D.E.2
Salahuddin, S.3
-
30
-
-
84861814520
-
Ultra-low resistance ohmic contacts in graphene field effect transistors
-
May
-
J. S. Moon, M. Antcliffe, H. C. Seo, D. Curtis, S. Lin, A. Schmitz, I. Milosavljevic, A. A. Kiselev, R. S. Ross, D. K. Gaskill, P. M. Campbell, R. C. Fitch, K.-M. Lee, and P. Asbeck, "Ultra-low resistance ohmic contacts in graphene field effect transistors, " Appl. Phys. Lett., vol. 100, no. 20, pp. 203512-1-203512-3, May 2012.
-
(2012)
Appl. Phys. Lett
, vol.100
, Issue.20
, pp. 2035121-2035123
-
-
Moon, J.S.1
Antcliffe, M.2
Seo, H.C.3
Curtis, D.4
Lin, S.5
Schmitz, A.6
Milosavljevic, I.7
Kiselev, A.A.8
Ross, R.S.9
Gaskill, D.K.10
Campbell, P.M.11
Fitch, R.C.12
Lee, K.-M.13
Asbeck, P.14
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