Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance

Journal of Computational Electronics

Volumn 12, Issue 2, 2013, Pages 85-93

  Hung Nguyen, Viet ^a,b,c   Saint Martin, Jérôme ^a   Querlioz, Damien ^a   Mazzamuto, Fulvio ^a   Bournel, Arnaud ^a   Niquet, Yann Michel ^c   Dollfus, Philippe ^a  

^a CNRS   (France)

^b INSTITUTE OF PHYSICS   (Viet Nam)

^c UNIV GRENOBLE ALPES   (France)

Author keywords

Dirac fermions; Graphene device; Green's function; Negative differential resistance; Quantum transport; Tunnel diode; Tunnel transistor

Indexed keywords

DIRAC FERMIONS; GRAPHENE DEVICES; NEGATIVE DIFFERENTIAL RESISTANCES; QUANTUM TRANSPORT; TUNNEL TRANSISTORS;

DIGITAL DEVICES; ENERGY GAP; GRAPHENE; GREEN'S FUNCTION; HAMILTONIANS; NEGATIVE RESISTANCE; QUANTUM ELECTRONICS; TUNNEL DIODES;

NANORIBBONS;

EID: 84879015877     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-013-0434-2     Document Type: Article

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