메뉴 건너뛰기




Volumn , Issue , 2011, Pages 1-30

Ionic Memory Technology

Author keywords

Crossbar memory array; Flash memory; Ionic memory devices; Nonvolatile memory; Resistive switching memory; Switching characteristics

Indexed keywords


EID: 84887549022     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9783527635566.ch1     Document Type: Chapter
Times cited : (18)

References (68)
  • 1
    • 84863183857 scopus 로고    scopus 로고
    • International Technology Roadmap of Semiconductor (ITRS)
    • chapter
    • International Technology Roadmap of Semiconductor (ITRS), Emerging Research Device (ERD) chapter, 2009.
    • (2009) Emerging Research Device (ERD)
  • 3
    • 35748974883 scopus 로고    scopus 로고
    • Nanoionics-based resistive switching memories
    • Waser, R. and Aono, M. (2007) Nanoionics-based resistive switching memories. Nat. Mater., 6, 833-840.
    • (2007) Nat. Mater. , vol.6 , pp. 833-840
    • Waser, R.1    Aono, M.2
  • 6
    • 0037097919 scopus 로고    scopus 로고
    • Formation and disappearance of a nanoscale silver cluster realized by solid electrochemical reaction
    • Terabe, K., Nakayama, T., Hasegawa, T., and Aonob, M. (2002) Formation and disappearance of a nanoscale silver cluster realized by solid electrochemical reaction. J. Appl. Phys., 91, 10110-10114.
    • (2002) J. Appl. Phys. , vol.91 , pp. 10110-10114
    • Terabe, K.1    Nakayama, T.2    Hasegawa, T.3    Aonob, M.4
  • 7
    • 20444372632 scopus 로고    scopus 로고
    • Nanoscalememoryelements based on solid-state electrolytes
    • Kozicki, M.N., Park, M., and Mitkova, M. (2005) Nanoscalememoryelements based on solid-state electrolytes. IEEE Trans. Nanotechnol., 4, 331-338.
    • (2005) IEEE Trans. Nanotechnol. , vol.4 , pp. 331-338
    • Kozicki, M.N.1    Park, M.2    Mitkova, M.3
  • 11
    • 11944255355 scopus 로고    scopus 로고
    • Quantized conductance atomic switch
    • Terabe, K., Hasegawa, T., Nakayama, T., and Aono, M. (2005) Quantized conductance atomic switch. Nature, 433, 47-50.
    • (2005) Nature , vol.433 , pp. 47-50
    • Terabe, K.1    Hasegawa, T.2    Nakayama, T.3    Aono, M.4
  • 15
    • 33645641019 scopus 로고    scopus 로고
    • Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
    • Szot, K., Speier, W., Bihlmayer, G., and Waser, R. (2006) Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3. Nat. Mater., 5, 312-320.
    • (2006) Nat. Mater. , vol.5 , pp. 312-320
    • Szot, K.1    Speier, W.2    Bihlmayer, G.3    Waser, R.4
  • 21
    • 33751101320 scopus 로고    scopus 로고
    • 3 thin film for colossal electroresistance at room temperature
    • 093901-1, 093901-4
    • 3 thin film for colossal electroresistance at room temperature. J. Appl. Phys., 100, 093901-1-093901-4.
    • (2006) J. Appl. Phys. , vol.100
    • Kim, D.S.1    Lee, C.E.2    Kim, Y.H.3    Kim, Y.T.4
  • 22
    • 0037852017 scopus 로고    scopus 로고
    • Quantum point contact switch realized by solid electrochemical reaction
    • Terabe, K., Hasegawa, T., Nakayama, T., and Aono, M. (2001) Quantum point contact switch realized by solid electrochemical reaction. RIKEN Rev., 37, 7-8.
    • (2001) RIKEN Rev. , vol.37 , pp. 7-8
    • Terabe, K.1    Hasegawa, T.2    Nakayama, T.3    Aono, M.4
  • 23
    • 79955995963 scopus 로고    scopus 로고
    • Ionic/electronic mixed conductor tip of a scanning tunneling microscope as a metal atom source for nanostructuring
    • Terabe, K., Nakayama, T., Hasegawa, T., and Aono, M. (2002) Ionic/electronic mixed conductor tip of a scanning tunneling microscope as a metal atom source for nanostructuring. Appl. Phys. Lett., 80, 4009-4011.
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 4009-4011
    • Terabe, K.1    Nakayama, T.2    Hasegawa, T.3    Aono, M.4
  • 32
    • 0038485855 scopus 로고    scopus 로고
    • Switching and filament formation in hot-wire CVD p-type a-Si:H devices
    • Hu, J., Branz, H.M., Crandall, R.S.,Ward, S., and Wang, Q. (2003) Switching and filament formation in hot-wire CVD p-type a-Si:H devices. Thin Solid Films, 430, 249-252.
    • (2003) Thin Solid Films , vol.430 , pp. 249-252
    • Hu, J.1    Branz, H.M.2    Crandall, R.S.3    Ward, S.4    Wang, Q.5
  • 34
    • 40449139079 scopus 로고    scopus 로고
    • Si/a-Si core/shell nanowires as nonvolatile crossbar switches
    • Dong, Y., Yu, G., McAlpine, M.C., Lu, W., and Lieber, C.M. (2008) Si/a-Si core/shell nanowires as nonvolatile crossbar switches. Nano Lett., 2, 386-391.
    • (2008) Nano Lett. , vol.2 , pp. 386-391
    • Dong, Y.1    Yu, G.2    McAlpine, M.C.3    Lu, W.4    Lieber, C.M.5
  • 37
    • 65249109198 scopus 로고    scopus 로고
    • The growth of metallic nanofilaments in resistive switching memory devices based on solid electrolytes
    • 153504-1-153504-3
    • Guo, H.X., Gao, L.G., Xia, Y.D., Jiang, K., Xu, B., Liu, Z.G., and Yin, J. (2009) The growth of metallic nanofilaments in resistive switching memory devices based on solid electrolytes. Appl. Phys. Lett., 94, 153504-1-153504-3.
    • (2009) Appl. Phys. Lett. , vol.94
    • Guo, H.X.1    Gao, L.G.2    Xia, Y.D.3    Jiang, K.4    Xu, B.5    Liu, Z.G.6    Yin, J.7
  • 46
    • 33646907949 scopus 로고    scopus 로고
    • Effect of ion diffusion on switching voltage of solid-electrolyte nanometer switch
    • Banno, N., Sakamoto, T., Hasegawa, T., Terabe, K., and Aono, M. (2006) Effect of ion diffusion on switching voltage of solid-electrolyte nanometer switch. Jpn. J. Appl. Phys., 45, 3666-3668.
    • (2006) Jpn. J. Appl. Phys. , vol.45 , pp. 3666-3668
    • Banno, N.1    Sakamoto, T.2    Hasegawa, T.3    Terabe, K.4    Aono, M.5
  • 54
    • 60749127336 scopus 로고    scopus 로고
    • 2-based resistive switching cells: overcoming the voltage-time dilemma of electrochemical metallization memories
    • 072109-1, 072109-3
    • 2-based resistive switching cells: overcoming the voltage-time dilemma of electrochemical metallization memories. Appl. Phys. Lett., 94, 072109-1-072109-3.
    • (2009) Appl. Phys. Lett. , vol.94
    • Schindler, C.1    Staikov, G.2    Waser, R.3
  • 58
    • 33748997398 scopus 로고    scopus 로고
    • A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte
    • Kozicki, M.N., Gopalan, C., Balakrishnan, M., and Mitkova, M. (2006) A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte. IEEE Trans. Nanotechnol., 5, 535-544.
    • (2006) IEEE Trans. Nanotechnol. , vol.5 , pp. 535-544
    • Kozicki, M.N.1    Gopalan, C.2    Balakrishnan, M.3    Mitkova, M.4
  • 60
    • 57049088551 scopus 로고    scopus 로고
    • Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications
    • 212907-1, 212907-3
    • Pyun, M., Choi, H., Park, J.B., Lee, D., Hasan, M., Dong, R., Jung, S.J., Lee, J., Seong, D., Yoon, J., and Hwang, H. (2008) Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications. Appl. Phys. Lett., 93, 212907-1-212907-3.
    • (2008) Appl. Phys. Lett. , vol.93
    • Pyun, M.1    Choi, H.2    Park, J.B.3    Lee, D.4    Hasan, M.5    Dong, R.6    Jung, S.J.7    Lee, J.8    Seong, D.9    Yoon, J.10    Hwang, H.11
  • 65
    • 84948951350 scopus 로고    scopus 로고
    • Design and analysis of crossbar circuits for molecular nanoelectronics
    • Ziegler, M.M. and Stan, M.R. (2002) Design and analysis of crossbar circuits for molecular nanoelectronics. IEEE NANO, p. 323.
    • (2002) IEEE NANO , pp. 323
    • Ziegler, M.M.1    Stan, M.R.2
  • 66
    • 3042808315 scopus 로고    scopus 로고
    • CMOS/nano co-design for crossbar-based molecular electronic systems
    • Ziegler, M.M. and Stan, M.R. (2003) CMOS/nano co-design for crossbar-based molecular electronic systems. IEEE Trans. Nanotechnol., 2, 217.
    • (2003) , vol.2 , pp. 217
    • Ziegler, M.M.1    Stan, M.R.2
  • 68
    • 62549151248 scopus 로고    scopus 로고
    • Hybrid CMOS/nanoelectronic circuits: opportunities and challenges
    • Likharev, K.K. (2008) Hybrid CMOS/nanoelectronic circuits: opportunities and challenges. J. Nanoelectron. Optoelectron., 3, 203.
    • (2008) J. Nanoelectron. Optoelectron. , vol.3 , pp. 203
    • Likharev, K.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.