Nanoscale resistive switching of a copper-carbon-mixed layer for nonvolatile memory applications

IEEE Electron Device Letters

Volumn 30, Issue 3, 2009, Pages 302-304

  Choi, Hyejung ^a   Pyun, Myeongbum ^a   Kim, Tae Wook ^a   Hasan, Musarrat ^a   Dong, Rui ^a   Lee, Joonmyoung ^a   Park, Ju Bong ^a   Yoon, Jaesik ^a   Seong, Dong Jun ^a   Lee, Takhee ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Cell array; Copper carbon mixed (Cu C) layer; Resistance random access memory; Resistive switching

Indexed keywords

COPPER; DATA STORAGE EQUIPMENT; NANOSTRUCTURED MATERIALS; RANDOM ACCESS STORAGE; SWITCHING SYSTEMS;

CELL ARRAY; CURRENT VOLTAGES; MIXED LAYERS; NANO-SCALE; NANOSCALE JUNCTIONS; NARROW DISTRIBUTIONS; NON-VOLATILE MEMORY APPLICATIONS; ON/OFF RATIOS; OPERATION CURRENTS; RESET VOLTAGES; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; RESISTIVE SWITCHING; SWITCHING MECHANISMS;

SWITCHING;

EID: 62549105712     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2012273     Document Type: Article

References (16)

1. International Technology Roadmap for Semiconductors (ITRS), 2007.
2. R. Waser and M. Aono, "Nanoionic-based resistive switching memories," Nat. Mater., vol. 6, no. 11, pp. 833-840, Nov. 2007.
3. T. Sakamoto, H. Sunamura, H. Kawaura, T, Hasegawa, T. Nakayama, and M. Aono, "Nanometer-scale switches using copper sulfide," Appl. Phys. Lett., vol. 82, no. 18, pp. 3032-3034, May 2003.
4. M. N. Kozicki, M. Park, and M. Mitkova, "Nanoscale memory elements based on solid-state electrolytes," IEEE Trans. Nanotechnol., vol. 4, no. 3, pp. 331-338, May 2005.
5. S.-E. Alm, M.-J. Lee, Y. Park, B. S. Kang, C. B. Lee, K. H. Kim, S. Seo, D.-S. Sub, D.-C. Kim, J. Hur, W. Xianyu, G. Stefanovich, H. Yin, I.-K. Yoo, J.-H. Lee, J.-B. Park, I.-G. Back, and B. H. Park, "Write current reduction in transition metal oxide based resistance-change memory," Adv. Mater., vol. 20, no. 5, pp. 924-928, Feb. 2008.
6. K. Aratani, K. Ohba, T. Mizuguchi, S. Yasuda, T. Shiimoto, T. Tsushima, T. Sone, K. Endo, A. Kouchiyama, S. Sasaki, A. Maesaka, N. Yamada, and H. Narisawa, "A novel resistance memory with high scalability and nanosecond switching," in IEDM Tech. Dig., 2007, pp. 783-786.
7. 2," IEEE Trans. Electron Devices, vol. 54, no. 10, pp. 2762-2768, Oct. 2007.
8. D. Lee, D.-J. Seong, I. Jo, F. Xiang, R. Dong, S. Oh, and H. Hwang, "Resistance switching of copper doped MoOx films for nonvolatile memory applications," Appl. Phys. Lett., vol. 90, no. 12, p. 122 104, Mar. 2007.
9. 2," IEEE Electron Device Lett. vol. 29, no. 5, pp. 434-437, May 2008.
10. 5 solid-electrolyte switch with improved reliability," in VLSI Symp. Tech. Dig., 2007, pp. 38-39.
11. Y. Pauleau, F. Thièry, V. V. Uglov, A. K. Kuleshov, S. N. Dub, and M. P. Samtsov, "Preparation, structure and mechanical properties of nanostructured copper-carbon films," Rev. Adv. Mater. Sci., vol. 4, pp. 139-146, Apr. 2003.
12. J. Imahori, H. Oku, and M. Murakami, "Diffusion barrier properties of TaC between Si and Cu," Thin Solid Films, vol. 301, no. 1, pp. 142-148, Jan. 1997.
13. M. Pyun, H. Choi, J.-B. Park, D. Lee, M. Hasan, R. Dong, S.-J. Jung, J. Lee, D.-J. Seong, J. Yoon, and H. Hwang, "Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications," Appl. Phys. Lett., vol. 93, no. 21, p. 212 907, Nov. 2008.
14. Y.-S. Han, Y.-K. Kim, and J.-Y. Lee, "Effect of argon and oxygen addition to the CH4-H2 feed gas on diamond synthesis by microwave plasma enhanced chemical vapor deposition," Thin Solid Films, vol. 310, no. 1/2, pp. 39-46, Jun. 1997.
15. x -metal heterostructures," Appl. Phys. Lett., vol. 90, no. 4, p. 042 107, Jan. 2007.
16. G. K. White and P. J. Meeson, Experimental Techniques in Low-Temperature Physics. London, UK.: Ox ford Univ. Press, 2002.