Effect of oxygen concentration on characteristics of NiOX-based resistance random access memory

IEEE Transactions on Magnetics

Volumn 43, Issue 2, 2007, Pages 939-943

  Lee, Ming Daou ^a   Ho, Chia Hua ^b   Lo, Chi Kuen ^c   Peng, Tai Yen ^a   Yao, Yeong Der ^d  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^d TATUNG UNIVERSITY   (Taiwan)

Author keywords

NiO; Resistance random access memory (RRAM); Schottky emission

Indexed keywords

MAGNETIC FILMS; MAGNETIC STORAGE; NICKEL COMPOUNDS; PERMITTIVITY;

MATHEMATICAL FITTING; NICKEL OXIDE; RESISTANCE RANDOM ACCESS MEMORY (RRAM); SCHOTTKY EMISSION;

RANDOM ACCESS STORAGE;

EID: 33846697963     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2006.888525     Document Type: Article

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