Effect of oxygen annealing on Pr0.7Ca0.3MnO 3 thin film for colossal electroresistance at room temperature

Journal of Applied Physics

Volumn 100, Issue 9, 2006, Pages

  Kim, D S ^a   Lee, C E ^a   Kim, Y H ^b   Kim, Y T ^b  

^a Korea University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; ELECTRIC RESISTANCE; OXYGEN; PRASEODYMIUM COMPOUNDS; RANDOM ACCESS STORAGE; SWITCHING FUNCTIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

COLOSSAL ELECTRORESISTANCES; RESISTANCE RATIO; SWITCHING CHARACTERISTICS;

THIN FILMS;

EID: 33751101320     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2364386     Document Type: Article

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