Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2009, Pages 33-34

  Rahaman, S Z ^a   Maikap, S ^a   Lin, C H ^b   Wu, T Y ^b   Chen, Y S ^b   Tzeng, P J ^b   Chen, F ^b   Lai, C S ^a   Kao, M J ^b   Tsai, M J ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE; LOW CURRENTS; LOW-RESISTANCE STATE; MEMORY DEVICE; MULTI-LEVEL; NON-VOLATILE MEMORY APPLICATION; PROGRAMMING CURRENTS; RESISTANCE RATIO; RESISTIVE SWITCHING MEMORIES;

SECURITY SYSTEMS;

SWITCHING SYSTEMS;

EID: 77950182234     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2009.5159279     Document Type: Conference Paper

References (4)

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2. M. N. Kozicki et. al., Symp. NVMTS05 1541405, p. 83, (2005).
3. T. Sakamoto et. al., Appl. Phys. Lett. 91, 092110 (2007).
4. Y. -R. Tsai et. al., SSDM-2008, p. 458-459.