메뉴 건너뛰기




Volumn 1, Issue , 2006, Pages 116-117

Ag/a-Si:H/c-Si resistive switching nonvolatile memory devices

Author keywords

a Si; Crossbar; Nonvolatile memory; Resistive switching

Indexed keywords

A-SI; ACTIVE AREAS; CROSSBAR; NANO SCALING; NON VOLATILE MEMORY DEVICES; NONVOLATILE MEMORY; RESISTIVE SWITCHING; SI BASED;

EID: 50249100295     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NMDC.2006.4388711     Document Type: Conference Paper
Times cited : (3)

References (5)
  • 1
    • 10044289655 scopus 로고    scopus 로고
    • High-performance emerging solid-state memory technologies
    • H. Goronkin, and Y. Yang, "High-performance emerging solid-state memory technologies," MRS Bull. 29, 805, 2004.
    • (2004) MRS Bull , vol.29 , pp. 805
    • Goronkin, H.1    Yang, Y.2
  • 2
    • 0141499770 scopus 로고    scopus 로고
    • Array-based architecture for FET-based, nanoscale electronics
    • DeHon, A, "Array-based architecture for FET-based, nanoscale electronics," IEEE Trans. on Nanotechnology 2, pp. 23-32, 2003.
    • (2003) IEEE Trans. on Nanotechnology , vol.2 , pp. 23-32
    • DeHon, A.1
  • 4
    • 0020940255 scopus 로고    scopus 로고
    • A. E. Owen, P. G. Le Comber, W. E. Spear and J. Hajto, Memory switching in amorphous silicon devices, J. Non-Cryst. Solids 59 & 60, pp. 1273-1280, 1983.
    • A. E. Owen, P. G. Le Comber, W. E. Spear and J. Hajto, "Memory switching in amorphous silicon devices," J. Non-Cryst. Solids 59 & 60, pp. 1273-1280, 1983.
  • 5
    • 35949005303 scopus 로고
    • Switching in amorphous-silicon devices
    • M. Jafar and D. Haneman, "Switching in amorphous-silicon devices," Phys. Rev. B 49, pp. 13611-13615, 1994.
    • (1994) Phys. Rev. B , vol.49 , pp. 13611-13615
    • Jafar, M.1    Haneman, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.