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ECS Journal of Solid State Science and Technology

Volumn 2, Issue 11, 2013, Pages

High-Quality thin SiO2 films grown by atomic layer deposition using tris(dimethylamino)silane (TDMAS) and Ozone

(2) Han, Lei a Chen, Zhi a,b

a UNIVERSITY OF KENTUCKY (United States)

b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84887497996 PISSN: 21628769 EISSN: 21628777 Source Type: Journal
DOI: 10.1149/2.001312jss Document Type: Article

Times cited : (18)

References (36)

1
- 84887491012
- T. Hou, J. Gutt, C. Lim, S.Marcus, C. Pomarede, M. Gardner, R. Murto, and H. Huff, in Electrochemical Society Meeting, 2002-2, 384 (2002)
- (2002) Electrochemical Society Meeting 2002-2 , pp. 384
- Hou, T.¹ Gutt, J.² Lim, C.³ Marcus, S.⁴ Pomarede, C.⁵ Gardner, M.⁶ Murto, R.⁷ Huff, H.⁸

2
- 0003679027
- McGraw-Hill New York
- S. M. Sze and S. M. Sze, VLSI technology, McGraw-Hill New York (1988)
- (1988) VLSI Technology
- Sze, S.M.¹ Sze, S.M.²

3
- 4243139335
- H. Leplan, B. Geenen, J.-Y. Robic, and Y. Pauleau, in 1994 International Symposium on Optical Interference Coatings, p. 1263 (1994)
- (1994) 1994 International Symposium on Optical Interference Coatings , pp. 1263
- Leplan, H.¹ Geenen, B.² Robic, J.-Y.³ Pauleau, Y.⁴

4
- 12144289040
- R. Ishihara, Y. Hiroshima, D. Abe, B. D. Van Dijk, P. C. Van Der Wilt, S. Higashi, S. Inoue, T. Shimoda, J.Metselaar, and C. Beenakker, Electron Devices, IEEE Transactions on, 51, 500 (2004)
- (2004) Electron Devices, IEEE Transactions on , vol.51 , pp. 500
- Ishihara, R.¹ Hiroshima, Y.² Abe, D.³ Van Dijk, B.D.⁴ Van Der Wilt, P.C.⁵ Higashi, S.⁶ Inoue, S.⁷ Shimoda, T.⁸ Metselaar, J.⁹ Beenakker, C.¹⁰

5
- 18144436217
- H. Bartzsch, D. Gloß, B. Bocher, P. Frach, and K. Goedicke, Surface & coatings technology, 174, 774 (2003)
- (2003) Surface & Coatings Technology , vol.174 , pp. 774
- Bartzsch, H.¹ Gloß, D.² Bocher, B.³ Frach, P.⁴ Goedicke, K.⁵

6
- 33748433470
- Academic Press: San Diego, CA
- M. Ritala and M. Leskela, Atomic layer deposition, in, p. 103, Academic Press: San Diego, CA (2001)
- (2001) Atomic Layer Deposition , pp. 103
- Ritala, M.¹ Leskela, M.²

7
- 0037156103
- M. Leskela and M. Ritala, Thin solid films, 409, 138 (2002)
- (2002) Thin Solid Films , vol.409 , pp. 138
- Leskela, M.¹ Ritala, M.²

8
- 75649140552
- S. M. George, Chem. Rev., 110, 111 (2010)
- (2010) Chem. Rev , vol.110 , pp. 111
- George, S.M.¹

9
- 4344702865
- J. Ferguson, E. Smith, A. Weimer, and S. George, Journal of The Electrochemical Society, 151, G528 (2004)
- (2004) Journal of the Electrochemical Society , vol.151
- Ferguson, J.¹ Smith, E.² Weimer, A.³ George, S.⁴

10
- 13844255279
- J. W. Lim, S. J. Yun, and J. H. Lee, ETRI journal, 27, 118 (2005)
- (2005) ETRI Journal , vol.27 , pp. 118
- Lim, J.W.¹ Yun, S.J.² Lee, J.H.³

11
- 67049135968
- B. Burton, S. Kang, S. Rhee, and S. George, The Journal of Physical Chemistry C, 113, 8249 (2009)
- (2009) The Journal of Physical Chemistry C , vol.113 , pp. 8249
- Burton, B.¹ Kang, S.² Rhee, S.³ George, S.⁴

12
- 33845458388
- J. K. Kang and C. B. Musgrave, Journal of Applied Physics, 91, 3408 (2002)
- (2002) Journal of Applied Physics , vol.91 , pp. 3408
- Kang, J.K.¹ Musgrave, C.B.²

13
- 84856935271
- M. L. ONeill, H. R. Bowen, A. Derecskei-Kovacs, K. S. Cuthill, B. Han, and M. Xiao, Interface-Electrochemical Society, 20, 33 (2011)
- (2011) Interface-Electrochemical Society , vol.20 , pp. 33
- Oneill, M.L.¹ Bowen, H.R.² Derecskei-Kovacs, A.³ Cuthill, K.S.⁴ Han, B.⁵ Xiao, M.⁶

14
- 67149131707
- J. Li, J. Wu, C. Zhou, B. Han, E. J. Karwacki, M. Xiao, X. Lei, and H. Cheng, The Journal of Physical Chemistry C, 113, 9731 (2009)
- (2009) The Journal of Physical Chemistry C , vol.113 , pp. 9731
- Li, J.¹ Wu, J.² Zhou, C.³ Han, B.⁴ Karwacki, E.J.⁵ Xiao, M.⁶ Lei, X.⁷ Cheng, H.⁸

15
- 34547828174
- Y. Kinoshita, F. Hirose, H. Miya, K. Hirahara, Y. Kimura, and M. Niwano, Electrochem. Solid State Lett., 10, G80 (2007)
- (2007) Electrochem. Solid State Lett , vol.10
- Kinoshita, Y.¹ Hirose, F.² Miya, H.³ Hirahara, K.⁴ Kimura, Y.⁵ Niwano, M.⁶

16
- 33750822508
- S. Kamiyama, T. Miura, and Y. Nara, Thin solid films, 515, 1517 (2006)
- (2006) Thin Solid Films , vol.515 , pp. 1517
- Kamiyama, S.¹ Miura, T.² Nara, Y.³

17
- 53549092746
- J. Bachmann, R. Zierold, Y. T. Chong, R. Hauert, C. Sturm, R. Schmidt-Grund, B. Rheinlander, M. Grundmann, U. Gosele, and K. Nielsch, Angewandte Chemie International Edition, 47, 6177 (2008)
- (2008) Angewandte Chemie International Edition , vol.47 , pp. 6177
- Bachmann, J.¹ Zierold, R.² Chong, Y.T.³ Hauert, R.⁴ Sturm, C.⁵ Schmidt-Grund, R.⁶ Rheinlander, B.⁷ Grundmann, M.⁸ Gosele, U.⁹ Nielsch, K.¹⁰

18
- 77950561190
- D. Hiller, R. Zierold, J. Bachmann, M. Alexe, Y. Yang, J. W. Gerlach, A. Stesmans, M. Jivanescu, U. Muller, J. Vogt, H. Hilmer, P. Loper, M. Kunle, F. Munnik, K. Nielsch, and M. Zacharias, Journal of Applied Physics, 107, 064314 (2010)
- (2010) Journal of Applied Physics , vol.107 , pp. 064314
- Hiller, D.¹ Zierold, R.² Bachmann, J.³ Alexe, M.⁴ Yang, Y.⁵ Gerlach, J.W.⁶ Stesmans, A.⁷ Jivanescu, M.⁸ Muller, U.⁹ Vogt, J.¹⁰ Hilmer, H.¹¹ Loper, P.¹² Kunle, M.¹³ Munnik, F.¹⁴ Nielsch, K.¹⁵ Zacharias, M.¹⁶

19
- 76549117084
- F. Hirose, Y. Kinoshita, S. Shibuya, Y. Narita, H. Miya, K. Hirahara, Y. Kimura, and M. Niwano, ECS Transactions, 19, 417 (2009)
- (2009) ECS Transactions , vol.19 , pp. 417
- Hirose, F.¹ Kinoshita, Y.² Shibuya, S.³ Narita, Y.⁴ Miya, H.⁵ Hirahara, K.⁶ Kimura, Y.⁷ Niwano, M.⁸

20
- 84887498076
- Cambridge, MA, USA
- G. Liu,R.Bhatia, E. W.Deguns,M. J.Dalberth, M. J. Sowa,A.Bertuch, L. Lecordier, G. Sundaram, and J. S. Becker, in 11th International Conference on Atomic Layer Deposition, Cambridge, MA, USA (2011)
- (2011) 11th International Conference on Atomic Layer Deposition
- Liu, G.¹ Bhatia, R.² Deguns, E.W.³ Dalberth, M.J.⁴ Sowa, M.J.⁵ Bertuch, A.⁶ Lecordier, L.⁷ Sundaram, G.⁸ Becker, J.S.⁹

21
- 77957712125
- S. Li, L. Han, and Z. Chen, Journal of The Electrochemical Society, 157, G221 (2010)
- (2010) Journal of the Electrochemical Society , vol.157
- Li, S.¹ Han, L.² Chen, Z.³

22
- 84860338925
- Z. Chen, P.-L. Ong, Y. Wang, and L. Han, Applied Physics Letters, 100, 171602 (2012)
- (2012) Applied Physics Letters , vol.100 , pp. 171602
- Chen, Z.¹ Ong, P.-L.² Wang, Y.³ Han, L.⁴

23
- 34548071335
- J. C. Hackley, T. Gougousi, and J. D. Demaree, Journal of Applied Physics, 102, 034101 (2007)
- (2007) Journal of Applied Physics , vol.102 , pp. 034101
- Hackley, J.C.¹ Gougousi, T.² Demaree, J.D.³

24
- 28344457990
- M. T. Ho, Y. Wang, R. T. Brewer, L. S. Wielunski, Y. J. Chabal, N. Moumen, and M. Boleslawski, Applied Physics Letters, 87, 133103 (2005)
- (2005) Applied Physics Letters , vol.87 , pp. 133103
- Ho, M.T.¹ Wang, Y.² Brewer, R.T.³ Wielunski, L.S.⁴ Chabal, Y.J.⁵ Moumen, N.⁶ Boleslawski, M.⁷

25
- 0042697357
- K. Roy, S. Mukhopadhyay, and H. Mahmoodi-Meimand, Proceedings of the IEEE, 91, 305 (2003
- (2003) Proceedings of the IEEE , vol.91 , pp. 305
- Roy, K.¹ Mukhopadhyay, S.² Mahmoodi-Meimand, H.³

26
- 0031140867
- S.-H. Lo, D. Buchanan, Y. Taur, and W. Wang, Electron Device Letters, IEEE, 18, 209 (1997)
- (1997) Electron Device Letters, IEEE , vol.18 , pp. 209
- Lo, S.-H.¹ Buchanan, D.² Taur, Y.³ Wang, W.⁴

27
- 0000697110
- B. Brar, G. Wilk, and A. Seabaugh, Applied Physics Letters, 69, 2728 (1996)
- (1996) Applied Physics Letters , vol.69 , pp. 2728
- Brar, B.¹ Wilk, G.² Seabaugh, A.³

28
- 0030212001
- H. Sasaki, M. Ono, T. Yoshitomi, T. Ohguro, S.-I. Nakamura, M. Saito, and H. Iwai, Electron Devices, IEEE Transactions on, 43, 1233 (1996)
- (1996) Electron Devices, IEEE Transactions on , vol.43 , pp. 1233
- Sasaki, H.¹ Ono, M.² Yoshitomi, T.³ Ohguro, T.⁴ Nakamura, S.-I.⁵ Saito, M.⁶ Iwai, H.⁷

29
- 0003805738
- John Wiley & Sons, NY second edition
- R. S. Muller, T. I. Kamins, M. Chan, and P. K. Ko, Device electronics for integrated circuits, p. 401, John Wiley & Sons, NY (1986) second edition.)
- (1986) Device Electronics for Integrated Circuits , pp. 401
- Muller, R.S.¹ Kamins, T.I.² Chan, M.³ Ko, P.K.⁴

30
- 44049092149
- M. Bjork, J. Knoch, H. Schmid, H. Riel, and W. Riess, Applied Physics Letters, 92, 193504 (2008)
- (2008) Applied Physics Letters , vol.92 , pp. 193504
- Bjork, M.¹ Knoch, J.² Schmid, H.³ Riel, H.⁴ Riess, W.⁵

31
- 0001368234
- C. Osburn and D. Ormond, Journal of The Electrochemical Society, 119, 591 (1972)
- (1972) Journal of the Electrochemical Society , vol.119 , pp. 591
- Osburn, C.¹ Ormond, D.²

32
- 0020936680
- K.Yamabe,K. Taniguchi, andY. Matsushita, in Reliability Physics Symposium, 1983. 21st Annual, p. 184 (1983)
- (1983) Reliability Physics Symposium 1983. 21st Annual , vol.184
- Yamabe, K.¹ Taniguchi, K.² Matsushita, Y.³

33
- 0003432842
- C. Osburn and E.Weitzman, Journal of The Electrochemical Society, 119, 603 (1972)
- (1972) Journal of the Electrochemical Society , vol.119 , pp. 603
- Osburn, C.¹ Weitzman, E.²

34
- 0026914571
- W. J. Patrick, G. C. Schwartz, J. D. Chapple-Sokol, R. Carruthers, and K. Olsen, Journal of The Electrochemical Society, 139, 2604 (1992)
- (1992) Journal of the Electrochemical Society , vol.139 , pp. 2604
- Patrick, W.J.¹ Schwartz, G.C.² Chapple-Sokol, J.D.³ Carruthers, R.⁴ Olsen, K.⁵

35
- 21944449679
- S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, and M. Umeno, Applied Physics Letters, 73, 809 (1998)
- (1998) Applied Physics Letters , vol.73 , pp. 809
- Arulkumaran, S.¹ Egawa, T.² Ishikawa, H.³ Jimbo, T.⁴ Umeno, M.⁵

36
- 29944445827
- S. E. Alexandrov, N. McSporran, and M. L. Hitchman, Chemical Vapor Deposition, 11, 481 (2005)
- (2005) Chemical Vapor Deposition , vol.11 , pp. 481
- Alexandrov, S.E.¹ McSporran, N.² Hitchman, M.L.³

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