Single-Grain Si TFTs With ECR-PECVD Gate SiO2

IEEE Transactions on Electron Devices

Volumn 51, Issue 3, 2004, Pages 500-502

  Ishihara, Ryoichi ^a   Hiroshima, Yasushi ^b   Abe, Daisuke ^b   Van Dijk, Barry D ^a   Van der Wilt, Paul C ^a   Higashi, Seiichiro ^b   Inoue, Satoshi ^b   Shimoda, Tatsuya ^b   Metselaar, J W ^a   Beenakker, C I M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b SEIKO EPSON CORPORATION   (Japan)

Author keywords

Crystal growth; Dielectric materials; Excimer lasers; Location control; Poly Si; Thin film transistors (TFTs)

Indexed keywords

BACKSCATTERING; CARRIER CONCENTRATION; CRYSTAL GROWTH; CRYSTALLIZATION; DIELECTRIC MATERIALS; ELECTRON CYCLOTRON RESONANCE; ELECTRON DIFFRACTION; ELECTRON TRAPS; EXCIMER LASERS; GRAIN BOUNDARIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON ON INSULATOR TECHNOLOGY; THIN FILM TRANSISTORS;

LOCATION CONTROL;

GATES (TRANSISTOR);

EID: 12144289040     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.823326     Document Type: Article

References (12)

1. T. Sameshima, S. Usui, and M. Sekiya, "XeCl excimer-laser annealing used in the fabrication of poly-Si TFTs," IEEE Electron Device Lett., vol. EDL-7, pp. 276-278, 1986.
2. R. Ishihara, P. C. van der Wilt, B. D. van Dijk, A. Burtsev, F. C. Voogt, G. J. Bertens, J. W. Metselaar, and C. I. M. Beenakker, "Advanced excimer-laser crystallization techniques of Si thin-film for location control of large grain on glass," Proc. SPIE, vol. 4295, pp. 14-23, 2001.
3. R. Ishihara, A. Burtsev, and P. F. A. Alkemade, "Location-control of large Si grains by dual-beam excimer-laser and thick oxide portion," Jpn. J. Appl. Phys., vol. 39, no. 7A, pp. 3872-3878, 2000.
4. P. C. van der Wilt, B. D. van Dijk, G. J. Bertens, R. Ishihara, and C. I. M. Beenakker, "Formation of location-controlled crystalline islands using substrate-embedded-seeds in excimer-laser crystallization of silicon films," Appl. Phys. Lett., vol. 72, no. 12, pp. 1819-1821, 2001.
5. R. S. Sposili, M. A. Crowder, and J. S. Im, "Single-crystal Si films via a low-substrate-temperature excimer-laser crystallization method," in Proc. Mater. Res. Soc. Symp., vol. 452, 1997, pp. 953-958.
6. B. D. van Dijk, P. C. van der Wilt, G. J. Bertens, L. K. Nanver, and R. Ishihara, "Single-crystal thin film transistor by grain-filter location-controlled excimer-laser crystallization," in Proc. MRS Advanced Materials Devices Large-Area Electron., vol. 695, 2001, pp. D12.3.1-6.
7. H. Ohshima and S. Morozumi, "Future trends for TFT integrated circuits on glass substrates," in IEDM Tech. Dig., 1989, pp. 157-160.
8. 2/Si interface using ECR-PECVD," in AM-LCD Tech. Dig., 2001, pp. 49-52.
9. S. Higashi, D. Abe, S. Inoue, and T. Shimoda, "Low temperature process technologies and their applicatioin to polycrystalline Si thin-film transistor fabrication," in AM-LCD Tech. Dig., 2001, pp. 255-258.
10. R. Ishihara, P. C. W. van der,B. D. van Dijk, J. W. Metselaar, and C. I. M. Beenakker, "Property of single-crystalline Si TFTs fabricated with μ-Czochralski (grain filter) process," Proc. SPIE, vol. 5004, pp. 10-19, 2003.
11. J. R. Ayres, "Characterization of trapping states in polycrystalline-silicon thin film transistors by deep level transient spectroscopy," J. Appl. Phys., vol. 74, pp. 1787-1792, 1993.
12. S. M. Sze, Physics of Semiconductor Devices, 2 ed. New York: Wiley, 1981, ch. 7, p. 369.