Impact of aminosilane precursor structure on silicon oxides by atomic layer deposition

Electrochemical Society Interface

Volumn 20, Issue 4, 2011, Pages 33-37

  O'Neill, Mark L ^a   Bowen, Heather R ^b   Derecskei Kovacs, Agnes ^c   Cuthill, Kirk S ^d   Han, Bing ^e   Xiao, Manchao ^f  

^a Carlsbad Applications Lab   (United States)

^b Aircraft Company of Oceanside   (United States)

^c UNIVERSITY OF DEBRECEN   (Hungary)

^d PEKING UNIVERSITY   (China)

^e CARLETON UNIVERSITY   (Canada)

^f WASHINGTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DEPOSITION; DESORPTION; SILICON OXIDES;

ACIDIC NATURE; AMINOSILANES; OXYGEN SOURCES; PROCESS CYCLES; PROCESSING TOOLS; PULSE TIME; SURFACE BOUNDS;

ATOMIC LAYER DEPOSITION;

EID: 84856935271     PISSN: 10648208     EISSN: 19448783     Source Type: Journal    
DOI: 10.1149/2.F03114if     Document Type: Article

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