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Applied Physics Letters

Volumn 100, Issue 17, 2012, Pages

Lateral heating of SiO 2/Si: Interfacial Si structure change causing tunneling current reduction

(4) Chen, Zhi a Ong, Pang Leen a,b Wang, Yichun a,c Han, Lei a

a UNIVERSITY OF KENTUCKY (United States)

b Emitech Inc (United States)

c Applied Materials China (China)

Author keywords

[No Author keywords available]

Indexed keywords

FLAT-BAND VOLTAGE SHIFT; LATERAL HEATING; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; ORDERS OF MAGNITUDE; REPRODUCIBILITIES; STRAINED-SI; STRONG CORRELATION; STRUCTURE CHANGE; TUNNELING CURRENT;

ELECTRON TUNNELING; HEATING EQUIPMENT;

SILICON;

EID: 84860338925 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4709418 Document Type: Article

Times cited : (3)

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