Low temperature silicon dioxide by thermal atomic layer deposition: Investigation of material properties

Journal of Applied Physics

Volumn 107, Issue 6, 2010, Pages

  Hiller, D ^a,b   Zierold, R ^c   Bachmann, J ^b,c   Alexe, M ^b   Yang, Y ^a,b   Gerlach, J W ^d   Stesmans, A ^e   Jivanescu, M ^e   Muller U ^f   Vogt, J ^g   Hilmer, H ^g   Loper P ^h   Kunle M ^h   Munnik, F ⁱ   Nielsch, K ^c   Zacharias, M ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c UNIVERSITY OF HAMBURG   (Germany)

^d LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

^e UNIVERSITY OF LEUVEN   (Belgium)

^f SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^g UNIVERSITY OF LEIPZIG   (Germany)

^h FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

ⁱ INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

3-AMINOPROPYLTRIETHOXYSILANE; CAPACITANCE VOLTAGE; CURRENT-VOLTAGE MEASUREMENTS; DATA POINTS; ELASTIC RECOIL DETECTION ANALYSIS; ELECTRICAL PROPERTY; ELECTRON SPIN RESONANCE; ETCH RATES; GROWTH PROCESS; HIGH THERMAL; INTERFACE DEFECTS; LOW TEMPERATURE SILICON DIOXIDES; LOW TEMPERATURES; MATERIAL PROPERTY; NANO-SCALE PORES; OH GROUP; OPTICAL TRANSMISSIONS; OXIDE CHARGE; RUTHERFORD BACK-SCATTERING; SHADOWING EFFECTS; SILICON DIOXIDE; SURFACE COVERAGES; THERMAL OXIDES; UV-VIS SPECTROSCOPY; VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; ATOMS; CRYSTAL ATOMIC STRUCTURE; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; HYDROFLUORIC ACID; INFRARED SPECTROSCOPY; LIGHT TRANSMISSION; NANOELECTRONICS; OPTICAL CONSTANTS; OPTICAL PROPERTIES; OZONE; PHOTORESISTS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON OXIDES; SPECTROSCOPIC ANALYSIS; SPECTROSCOPIC ELLIPSOMETRY; SPIN DYNAMICS; SURFACE ROUGHNESS; ULTRAVIOLET SPECTROSCOPY;

ELECTRON SPIN RESONANCE SPECTROSCOPY;

EID: 77950561190     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3327430     Document Type: Conference Paper

References (37)

1. M. Knez, K. Nielsch, and L. Niinistö, Adv. Mater. (Weinheim, Ger.) 0935-9648 19, 3425 (2007). 10.1002/adma.200700079 (Pubitemid 350134581)
2. S. W. Lee, K. Park, B. Han, S. H. Son, S. K. Rha, C. O. Park, and W. J. Lee, Electrochem. Solid-State Lett. 1099-0062 11, G23 (2008). 10.1149/1.2908201 (Pubitemid 351707132)
3. J. D. Ferguson, E. R. Smith, A. W. Weimer, and S. M. George, J. Electrochem. Soc. 0013-4651 151, G528 (2004). 10.1149/1.1768548
4. B. A. McCool and W. J. DeSisto, Chem. Vap. Deposition 0948-1907 10, 190 (2004). 10.1002/cvde.200304172
5. J. W. Klaus, O. Sneh, and S. M. George, Science 0036-8075 278, 1934 (1997). 10.1126/science.278.5345.1934 (Pubitemid 28013232)
6. J. W. Lim, S. J. Yun, and J. H. Lee, ETRI J. 1225-6463 27, 118 (2005). 10.4218/etrij.05.0204.0023
7. J. Bachmann, R. Zierold, Y. T. Chong, R. Hauert, C. Sturm, R. Schmidt-Grund, B. Rheinländer, M. Grundmann, U. Gösele, and K. Nielsch, Angew. Chem., Int. Ed. 1433-7851 47, 6177 (2008). 10.1002/anie. 200800245
8. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 0021-8979 89, 5243 (2001). 10.1063/1.1361065
9. J. Robertson, Rep. Prog. Phys. 0034-4885 69, 327 (2006). 10.1088/0034-4885/69/2/R02 (Pubitemid 43121643)
10. M. M. Frank, Y. J. Chabal, M. L. Green, A. Delabie, B. Brijs, G. D. Wilk, M. Y. Ho, E. B. O. da Rosa, I. J. R. Baumvol, and F. C. Stedile, Appl. Phys. Lett. 0003-6951 83, 740 (2003). 10.1063/1.1595719
11. M. L. Green, M. Y. Ho, B. Busch, G. D. Wilk, T. Sorsch, T. Conard, B. Brijs, W. Vandervorst, R. I. Räisänen, D. Muller, M. Bude, and J. Grazul, J. Appl. Phys. 0021-8979 92, 7168 (2002). 10.1063/1.1522811
12. R. B. Marcus and T. T. Sheng, J. Electrochem. Soc. 0013-4651 129, 1278 (1982). 10.1149/1.2124118
13. Y. H. Cho, S. W. Lee, B. J. Kim, and T. Fujii, Nanotechnology 0957-4484 18, 465303 (2007). 10.1088/0957-4484/18/46/465303 (Pubitemid 350093232)
14. N. Kaji, Y. Tezuka, Y. Takamura, M. Ueda, T. Nishimoto, H. Nakanishi, Y. Horiike, and Y. Baba, Anal. Chem. 0003-2700 76, 15 (2004). 10.1021/ac030303m (Pubitemid 38040628)
15. A. Burns, H. Ow, and U. Wiesner, Chem. Soc. Rev. 0306-0012 35, 1028 (2006). 10.1039/b600562b (Pubitemid 44611717)
16. K. Pitzschel, J. M. M. Moreno, J. Escrig, O. Albrecht, K. Nielsch, and J. Bachmann, ACS Nano 1936-0851 3, 3463 (2009). 10.1021/nn900909q
17. L. Moreno i Codinachs, C. Birkenstock, T. Garma, R. Zierold, J. Bachmann, K. Nielsch, M. J. Schöning, and A. Fontcuberta i Morral, Phys. Status Solidi A 0031-8965 206, 435 (2009). 10.1002/pssa.200880472
18. N. P. Barradas, C. Jeynes, and R. P. Webb, Appl. Phys. Lett. 0003-6951 71, 291 (1997). 10.1063/1.119524
19. M. A. Stevens Kalceff and M. R. Phillips, Phys. Rev. B 0163-1829 52, 5 (1995). 10.1103/PhysRevB.52.3122
20. Handbook of Optical Constants of Solids, edited by, E. D. Palik, (Academic, New York, 1997).
21. V. Gottschalch, R. Schmidt, B. Rheinländer, D. Pudis, S. Hardt, J. Kvietkova, G. Wagner, and R. Franzheld, Thin Solid Films 0040-6090 416, 224 (2002). 10.1016/S0040-6090(02)00704-6 (Pubitemid 35275818)
22. V. P. Tolstoy, I. V. Chernyshova, and V. A. Skryshevsky, Handbook of Infrared Spectroscopy of Ultrathin Films (Wiley, New York, 2003) 10.1002/047123432X;
23. M. Zacharias, D. Dimora-Malinovska, and M. Stutzmann, Philos. Mag. B 1364-2812 73, 799 (1996). 10.1080/13642819608239154
24. M. Perego, S. Ferrari, S. Spiga, E. Bonera, M. Fanciulli, and V. Soncini, Appl. Phys. Lett. 0003-6951 82, 121 (2003). 10.1063/1.1534937
25. E. H. Poindexter, G. J. Gerardi, M. -E. Rueckel, P. J. Caplan, N. M. Johnson, and D. K. Biegelsen, J. Appl. Phys. 0021-8979 56, 2844 (1984) 10.1063/1.333819; (Pubitemid 15420642)
26. A. Stesmans and V. V. Afanas'ev, Phys. Rev. B 0163-1829 57, 10030 (1998). 10.1103/PhysRevB.57.10030
27. A. Stesmans and V. V. Afanas'ev, J. Vac. Sci. Technol. B 1071-1023 16, 3108 (1998). 10.1116/1.590449
28. P. G. Tello, V. V. Afanas'ev, and A. Stesmans, Microelectron. Eng. 0167-9317 72, 81 (2004) 10.1016/j.mee.2003.12.020;
29. A. Stesmans and V. V. Afanas'ev, J. Appl. Phys. 0021-8979 97, 033510 (2005). 10.1063/1.1818718 (Pubitemid 40232224)
30. W. E. Carlos and S. M. Prokes, J. Appl. Phys. 0021-8979 78, 2129 (1995) 10.1063/1.360761;
31. H. J. von Bardeleben, J. L. Cantin, J. J. Ganem, and I. Trimaille, in Defects in High- κ Gate Dielectric Stacks, NATO Science Series II, edited by, E. Gusev, (Kluwer, Dordrecht, 2006);
32. B. B. Triplett, P. T. Chen, Y. Nishi, P. H. Kasai, J. J. Chambers, and L. Colombo, J. Appl. Phys. 0021-8979 101, 013703 (2007). 10.1063/1.2402974 (Pubitemid 46120635)
33. B. J. O'Sullivan, P. K. Hurley, C. Leveugle, and J. H. Das, J. Appl. Phys. 0021-8979 89, 3811 (2001). 10.1063/1.1343897
34. A. Ludsteck, J. Schulze, I. Eisele, W. Dietl, and Z. Nenyei, J. Appl. Phys. 0021-8979 95, 2827 (2004). 10.1063/1.1644042
35. B. Fowler and E. O'Brian, J. Vac. Sci. Technol. B 1071-1023 12, 441 (1994). 10.1116/1.587141
36. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
37. J. R. Brews, Solid-State Electron. 0038-1101 26, 711 (1983). 10.1016/0038-1101(83)90030-8