Comparative study of etching high crystalline quality AlN and GaN

Journal of Crystal Growth

Volumn 366, Issue , 2013, Pages 20-25

  Guo, W ^a   Xie, J ^b   Akouala, C ^a   Mita, S ^b   Rice, A ^a   Tweedie, J ^a   Bryan, I ^a   Collazo, R ^a   Sitar, Z ^a  

^a North Carolina State University   (United States)

^b HexaTech Inc   (United States)

Author keywords

A1. Etching; A1. Surfaces; B1. Nitrides; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

ALUMINUM; ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; ETCHING; GALLIUM NITRIDE; LIGHT EMITTING DIODES; OXIDES; SCANNING ELECTRON MICROSCOPY; SOLUTIONS;

ALUMINUM OXIDES; BOUNDARY PLANES; COMPARATIVE STUDIES; ETCHED SURFACE; GAN BULK CRYSTALS; HIGH-CRYSTALLINE QUALITY; SEMI CONDUCTING III-V MATERIALS; SURFACE OXYGEN;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84887047068     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.12.141     Document Type: Article

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