Reactive ion etching of novel materials - GaN and SiC

Vacuum

Volumn 70, Issue 2-3, 2003, Pages 249-254

  Szczesny, A ^a   Sniecikowski P ^a   Szmidt, J ^a   Werbowy, A ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Gallium nitride (GaN); Reactive ion etching (RIE); Silicon carbide SiC

Indexed keywords

ATOMIC FORCE MICROSCOPY; ION BOMBARDMENT; MORPHOLOGY; PROFILOMETRY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS;

GAS FLOW RATES;

SEMICONDUCTING GALLIUM;

EID: 2442568412     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00651-6     Document Type: Conference Paper

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