Electrical, structural, and chemical analysis of defects in epitaxial sige-based heterostructures

Journal of the Electrochemical Society

Volumn 152, Issue 5, 2005, Pages

  Bray, K R ^a   Zhao, W ^a   Kordas, L ^a   Wise, R ^b   Robinson, McD ^c   Rozgonyi, G ^a  

^a North Carolina State University   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c Lawrence Semiconduct Res Lab   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ETCHING; SILICON COMPOUNDS; STRESSES; SUBSTRATES;

DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS); ELECTRON-BEAM-INDUCED CURRENTS (EBIC); ETCH RATE; TRAP LEVELS;

HETEROJUNCTIONS;

EID: 20344402787     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1877952     Document Type: Article

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