Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 7, 2011, Pages 1594-1596

  Pernot, Cyril ^a   Fukahori, Shinya ^a   Inazu, Tetsuhiko ^a   Fujita, Takehiko ^a   Kim, Myunghee ^a   Nagasawa, Yosuke ^a   Hirano, Akira ^a   Ippommatsu, Masamichi ^a   Iwaya, Motoaki ^a   Kamiyama, Satoshi ^a,b   Akasaki, Isamu ^a   Amano, Hiroshi ^b  

^a MEIJO UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

AlGaN; AlN; EQE; ligth extraction; UV LED

Indexed keywords

ALGAN; ALN; EQE; LIGTH EXTRACTION; UV LED;

EFFICIENCY; FLIP CHIP DEVICES; LIGHT EMISSION; SAPPHIRE; SUBSTRATES;

LIGHT EMITTING DIODES;

EID: 79960098942     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201001037     Document Type: Article

References (9)

1. M. A. Khan, M. Shatalov, H. P. Maruska, H. M. Wang, and, E. Kuokstis, Jpn. J. Appl. Phys. 44, 7191 (2005).
2. M. Shataloc, W. Sun, Y. Bilenko, A. Sattu, X. Hu, J. Deng, J. Yang, M. Shur, C. Moe, M. Wraback, and, R. Gaska, Appl. Phys. Express 3, 062101 (2010).
3. H. Tsuzuki, F. Mori, K. Takeda, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and, H. Kan, J. Cryst. Growth 311, 2860 (2009).
4. A. Fujioka, T. Misaki, T. Murayama, Y. Narukawa, and, T. Mukai, Appl. Phys. Express 3, 041001 (2010).
5. C. Pernot, M. Kim, S. Fukahori, T. Inazu, T. Fujita, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki, and, H. Amano, Appl. Phys. Express 3, 061004 (2010).
6. W. Sun, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. Shur, and, R. Gaska, Appl. Phys. Lett. 96, 061102 (2010).
7. H. Hirayama, Y. Tsukada, T. Maeda, and, N. Kamata, Appl. Phys. Express 3, 031002 (2010).
8. J. R. Grandusky, S. R. Gibb, M. C. Mendrick, and, L. J. Schowalter, Appl. Phys. Express 3, 072103 (2010).
9. R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and, K. Su, Abstr. Int. Conf. Nitride Semiconductors (Jeju, Korea, 2009), p. 1279.