Demonstration of common-emitter operation in AlGaN/SiC heterojunction bipolar transistors

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 942-944

  Miyake, Hiroki ^a   Kimoto, Tsunenobu ^a   Suda, Jun ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Aluminum gallium nitride (AlGaN); commonemitter mode; current gain; heterojunction bipolar transistor (HBT); silicon carbide (SiC)

Indexed keywords

ALGAN; BAND-OFFSET; COMMON EMITTER; COMMON-EMITTER MODES; CURRENT GAINS; HETEROJUNCTION BIPOLAR TRANSISTOR (HBT); MODE OPERATION; SHORT-PERIOD SUPERLATTICES; WIDE GAP;

ALUMINUM; ALUMINUM GALLIUM NITRIDE; BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; SILICON CARBIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 77956175767     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2052012     Document Type: Article

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