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Journal of Electronic Materials

Volumn 38, Issue 4, 2009, Pages 533-537

Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes

(8) Miller, M A a Crawford, M H a Allerman, A A a Cross, K C a Banas, M A a Shul, R J a Stevens, J a Bogart, K H A a

a SANDIA NATIONAL LABORATORIES (United States)

Author keywords

AlGaN; Etched facets; Plasma etching; Ultraviolet laser; Wet chemical etching

Indexed keywords

ALGAN; AVERAGE ANGLES; COMBINED PROCESS; DEEP ULTRA-VIOLET LASERS; DEEP-UV LASERS; DIODE HETEROSTRUCTURES; ETCHED FACETS; ETCHING CONDITIONS; FACET FORMATIONS; RADIO FREQUENCY POWER; ROOT-MEAN-SQUARE ROUGHNESS; TWO-STEP METHODS; ULTRAVIOLET LASER; WET CHEMICAL ETCHING;

GALLIUM; LASERS; PHOTORESISTS; PLASMA ETCHING; PLASMAS; SURFACE ROUGHNESS;

WET ETCHING;

EID: 61849093848 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0670-1 Document Type: Conference Paper

Times cited : (27)

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