Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers

IEEE Journal of Quantum Electronics

Volumn 48, Issue 5, 2012, Pages 703-711

  Satter, Md Mahbub ^a   Kim, Hee Jin ^a   Lochner, Zachary ^a   Ryou, Jae Hyun ^a   Shen, Shyh Chiang ^a   Dupuis, Russell D ^a   Yoder, Paul Douglas ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

AlInN active layer; AlN substrate; tapered electron blocking layer (EBL); ultraviolet laser diodes

Indexed keywords

ACTIVE LAYER; ALGAN; ALN SUBSTRATES; DESIGN AND ANALYSIS; ELECTRON BLOCKING LAYER; GAIN DEGRADATIONS; POLARIZATION CHARGES; THEORETICAL INVESTIGATIONS;

DESIGN; OPTICAL GAIN; POLARIZATION; RESISTORS; ULTRAVIOLET LASERS;

ELECTRONS;

EID: 84860277472     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2012.2190496     Document Type: Article

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