3D analysis of advanced nano-devices using electron and atom probe tomography

Ultramicroscopy

Volumn 136, Issue , 2014, Pages 185-192

  Grenier, A ^a   Duguay, S ^b   Barnes, J P ^a   Serra, R ^a   Haberfehlner, G ^a   Cooper, D ^a   Bertin, F ^a   Barraud, S ^a   Audoit, G ^a   Arnoldi, L ^b   Cadel, E ^b   Chabli, A ^a   Vurpillot, F ^b  

^a CEA GRENOBLE   (France)

^b UNIVERSITÉ DE ROUEN   (France)

Author keywords

Atom probe tomography; Electron tomography; Gate all around transistor; Quantification; Tip shape simulation; Tri gate transistor

Indexed keywords

ATOM PROBE TOMOGRAPHY; ELECTRON TOMOGRAPHY; GATE-ALL-AROUND TRANSISTORS; QUANTIFICATION; TIP SHAPE; TRI-GATE TRANSISTORS;

ATOMS; ELECTRIC IMPEDANCE TOMOGRAPHY; FACSIMILE; NANOWIRES;

THREE DIMENSIONAL;

NANOWIRE; SILICON;

ARTICLE; ATOM; ATOM PROBE TOMOGRAPHY; CHEMICAL ANALYSIS; CONTRAST ENHANCEMENT; ELECTRON TOMOGRAPHY; EVAPORATION; IMAGE RECONSTRUCTION; NANODEVICE; SEMICONDUCTOR; STRUCTURE ANALYSIS; THREE DIMENSIONAL IMAGING; TOMOGRAPHY;

EID: 84887012208     PISSN: 03043991     EISSN: 18792723     Source Type: Journal    
DOI: 10.1016/j.ultramic.2013.10.001     Document Type: Article

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