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Volumn 100, Issue 25, 2012, Pages

Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography

Author keywords

[No Author keywords available]

Indexed keywords

65-NM NODE; ATOM PROBE TOMOGRAPHY; BORON CONCENTRATIONS; DEVICE FAILURES; DOPANT CONCENTRATIONS; METAL-OXIDE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SILICON-BASED; SINGLE CHIPS;

EID: 84863322392     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4730437     Document Type: Article
Times cited : (24)

References (24)
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  • 8
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    • 10.1007/BF00896619
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    • (1975) Appl. Phys. , vol.8 , pp. 251
    • Keyes, R.W.1
  • 10
    • 22244484728 scopus 로고    scopus 로고
    • 10.1126/science.1111104
    • S. Roy and A. Asenov, Science 309, 388 (2005). 10.1126/science.1111104
    • (2005) Science , vol.309 , pp. 388
    • Roy, S.1    Asenov, A.2
  • 11
    • 52649096841 scopus 로고    scopus 로고
    • 10.1063/1.2801013
    • Y. Li and C. H. Hwang, J. Appl. Phys. 102, 084509 (2007). 10.1063/1.2801013
    • (2007) J. Appl. Phys. , vol.102 , pp. 084509
    • Li, Y.1    Hwang, C.H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.