A study of gate-all-around transistors by electron tomography

AIP Conference Proceedings

Volumn 1173, Issue , 2009, Pages 290-293

  Cherns, P D ^a   Lorut, F ^b   Becu S ^a   Dupre C ^a   Tachi, K ^a   Cooper, D ^a   Chabli, A ^a   Ernst, T ^a  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Gate all around; Semiconductor; TEM; Tomography

Indexed keywords

EID: 70450250240     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3251236     Document Type: Conference Paper

References (4)

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