SCOPUS 정보 검색 플랫폼

Ultramicroscopy

Volumn 109, Issue 12, 2009, Pages 1479-1484

Dopant distributions in n-MOSFET structure observed by atom probe tomography

(7) Inoue, K a Yano, F b Nishida, A b Takamizawa, H a Tsunomura, T b Nagai, Y a Hasegawa, M a,c

a TOHOKU UNIVERSITY (Japan)

b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC (Japan)

c TOHOKU UNIVERSITY (Japan)

Author keywords

Atom probe tomography; Dopant distribution; MOSFET

Indexed keywords

ATOM PROBE TOMOGRAPHY; B ATOMS; CONCENTRATION OF; DOPANT DISTRIBUTION; ELONGATED GRAINS; GATE OXIDE; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOSFET; MOSFET STRUCTURES; NMOSFET; POLY-SI GATES; SOURCE/DRAIN EXTENSION;

ATOMS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MOS DEVICES; MOSFET DEVICES; POLYSILICON; PROBES; TOMOGRAPHY;

CRYSTAL ATOMIC STRUCTURE;

ARSENIC; BORON; METAL OXIDE; OXIDE; PHOSPHORUS;

ANALYTIC METHOD; ARTICLE; ATOM; ATOM PROBE TOMOGRAPHY; CHEMICAL STRUCTURE; ELECTRODE; SEMICONDUCTOR; TOMOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 70349967732 PISSN: 03043991 EISSN: None Source Type: Journal
DOI: 10.1016/j.ultramic.2009.08.002 Document Type: Article

Times cited : (86)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.