Toward atom probe tomography of microelectronic devices

Journal of Physics: Conference Series

Volumn 326, Issue 1, 2011, Pages

  Larson, D J ^a   Lawrence, D ^a   Lefebvre, W ^b   Olson, D ^a   Prosa, T J ^a   Reinhard, D A ^a   Ulfig, R M ^a   Clifton, P H ^a   Bunton, J H ^a   Lenz, D ^a   Olson, J D ^a   Renaud, L ^a   Martin, I ^a   Kelly, T F ^a  

^a CAMECA   (United States)

^b UNIVERSITÉ DE ROUEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MICROELECTRONICS; PROBES; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

ATOM PROBE TOMOGRAPHY; CHANNEL REGION; COMMERCIAL CHIPS; FOCUSED ION BEAM MILLING; GATE OXIDE; MICRO-ELECTRONIC DEVICES; MORPHOLOGICAL DATA; SCANNING TRANSMISSION ELECTRON MICROSCOPY;

ION BEAMS;

EID: 82955171614     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/326/1/012030     Document Type: Conference Paper

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