3D spatial resolution improvement by dual-axis electron tomography: Application to tri-gate transistors

Ultramicroscopy

Volumn 136, Issue , 2014, Pages 144-153

  Haberfehlner, Georg ^a   Serra, Raphaël ^a   Cooper, David ^a   Barraud, Sylvain ^a   Bleuet, Pierre ^a  

^a CEA GRENOBLE   (France)

Author keywords

Double tilt; Dual axis; Electron tomography; Gate thickness; SIRT; Tri gate

Indexed keywords

DOUBLE-TILT; DUAL AXIS; ELECTRON TOMOGRAPHY; GATE THICKNESS; SIRT; TRIGATE;

ELECTRIC IMPEDANCE TOMOGRAPHY; LOGIC GATES;

TRANSISTORS;

METAL OXIDE; NANOWIRE; OXIDE; SILICON;

ARTICLE; ARTIFACT; DUAL AXIS ELECTRON TOMOGRAPHY; ELECTRON TOMOGRAPHY; EXPERIMENTAL STUDY; IMAGE ANALYSIS; IMAGE QUALITY; IMAGE RECONSTRUCTION; NANOANALYSIS; NANODEVICE; PROCESS MODEL; SEMICONDUCTOR; SURFACE PROPERTY; THICKNESS; THREE DIMENSIONAL IMAGING;

EID: 84885823939     PISSN: 03043991     EISSN: 18792723     Source Type: Journal    
DOI: 10.1016/j.ultramic.2013.09.006     Document Type: Article

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