Electron tomography of gate-all-around nanowire transistors

Journal of Physics: Conference Series

Volumn 209, Issue , 2010, Pages

  Cherns, P D ^a   Lorut, F ^b   Dupre C ^a   Tachi, K ^a   Cooper, D ^a   Chabli, A ^a   Ernst, T ^a  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC IMPEDANCE TOMOGRAPHY; ION BEAMS; TOMOGRAPHY;

ELECTRON TOMOGRAPHY; GATE-ALL-AROUND; HIGH-ANGLE ANNULAR DARK FIELDS; HYDROGEN ANNEALING; NANOWIRE TRANSISTORS; RECTANGULAR CROSS-SECTIONS; SAMPLE ROTATION; TEST STRUCTURE;

NANOWIRES;

EID: 77950480131     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/209/1/012046     Document Type: Conference Paper

References (4)

1. Dupré C, Ernst T, Maffini-Alvaro V, Delaye V, Hartmann J-M, Borel S, Vizioz C, Faynot O, Ghibaudo G and Deleonibus S 2008 Solid State Electron. 52 519
2. Midgley PA and Weyland M 2003 Ultramicroscopy 96 413
3. Dornel E, Ernst T, Barbe J C, Hartmann J-M, Delaye V, Aussenac F, Vizioz C, Borel S, Maffini-Alvaro V, Isheden C and Foucher J 2007 Appl. Phys. Lett. 91 233502
4. Kawase N, Kato M, Nishioka H and Jinnai H 2007 Ultramicroscopy 107 8