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Applied Physics Letters

Volumn 100, Issue 9, 2012, Pages

Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography

(8) Takamizawa, H a Shimizu, Y a Nozawa, Y a Toyama, T a Morita, H b Yabuuchi, Y b Ogura, M b Nagai, Y a

a TOHOKU UNIVERSITY (Japan)

b PANASONIC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM-PROBE TOMOGRAPHY; BORON CONCENTRATIONS; DOPANT DISTRIBUTION; ELECTRONIC DEVICE; FIN FIELD-EFFECT TRANSISTORS; LOW ENERGIES; PLASMA DOPING;

FINS (HEAT EXCHANGE);

DOPING (ADDITIVES);

EID: 84857988730 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3690864 Document Type: Article

Times cited : (18)

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