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Volumn 364, Issue , 2013, Pages 149-154

Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE

Author keywords

A1. Crystal morphology; A1. Growth models; A3. Metalorganic chemical vapor deposition; B1. Microcolumn; B1. Nitrides; B2. Semiconductor gallium compounds

Indexed keywords

ASPECT RATIO; BOUNDARY LAYER FLOW; BOUNDARY LAYERS; CARRIER CONCENTRATION; FLOW OF GASES; GALLIUM NITRIDE; GASES; GROWTH TEMPERATURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NITROGEN; PHOTOLUMINESCENCE SPECTROSCOPY;

EID: 84885840299     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.11.027     Document Type: Article
Times cited : (24)

References (30)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.