GaN nanorods and LED structures grown on patterned Si and AlN/Si substrates by selective area growth

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2224-2226

  Li, Shunfeng ^a   Fündling, Sönke ^a   Sökmen, Ünsal ^a   Neumann, Richard ^a   Merzsch, Stephan ^a   Hinze, Peter ^b   Weimann, Thomas ^b   Jahn, Uwe ^c   Trampert, Achim ^c   Riechert, Henning ^c   Peiner, Erwin ^a   Wehmann, Hergo Heinrich ^a   Waag, Andreas ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Dislocations; GaN; LEDs; Modeling; MOVPE; Nanostructures; Patterning

Indexed keywords

DISLOCATIONS; GAN; LEDS; MODELING; MOVPE; PATTERNING;

ASPECT RATIO; ELECTROMAGNETIC INDUCTION; EPITAXIAL GROWTH; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; LIGHT EMISSION; LIGHT EMITTING DIODES; NANORODS; OPTICAL INTERCONNECTS; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTOLITHOGRAPHY; PLASMA ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 77955785559     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983457     Document Type: Conference Paper

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