GaN and LED structures grown on pre-patterned silicon pillar arrays

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 1, 2010, Pages 84-87

  Li, Shunfeng ^a   Fündling, Sönke ^a   Sökmen, Ünsal ^a   Merzsch, Stephan ^a   Neumann, Richard ^a   Hinze, Peter ^b   Weimann, Thomas ^b   Jahn, Uwe ^c   Trampert, Achim ^c   Riechert, Henning ^c   Peiner, Erwin ^a   Wehmann, Hergo Heinrich ^a   Waag, Andreas ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

2D LAYER; ALN NUCLEATION LAYERS; DIFFUSION PROCESS; GAN NANORODS; GAN NANOSTRUCTURES; HIGH EFFICIENCY; INGAN QUANTUM WELLS; LED STRUCTURE; LOW TEMPERATURES; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOVPE; OPTICAL INTERCONNECTIONS; PATTERNED SILICON; PRE-PATTERNING; SELF-ASSEMBLED GROWTH; SI NANOPILLARS; SI SUBSTRATES; SURFACE AREA; THREADING DISLOCATION; WHITE LIGHT EMISSION;

CATHODOLUMINESCENCE; CRYSTAL GROWTH; D REGION; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; NANORODS; OPTICAL INTERCONNECTS; OPTICAL PROPERTIES; ORGANIC LIGHT EMITTING DIODES (OLED); PLANTS (BOTANY); PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SILICON; TRANSMISSION ELECTRON MICROSCOPY; TWO DIMENSIONAL;

GALLIUM ALLOYS;

EID: 77949749551     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982608     Document Type: Conference Paper

References (19)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Appl. Phys. Lett. 72, 2 (1998).
2. T. Hino, S. Tomiya, T. Miyajima, K. Yanashima, S. Hashimoto, and M. Ikeda, Appl. Phys. Lett. 76, 23 (2000).
3. R. I. Barabash, G. E. Ice, C. Roder, J. Budai, W. Liu, S. Figge, S. Einfeldt, D. Hommel, and R. F. Davis, Phys. Status Solidi B 244, 1735 (2007).
4. D. Zubia and S. D. Hersee, J. Appl. Phys. 85, 6492 (1999).
5. T. Onuma, H. Amaike, M. Kubota, K. Okamota, H. Ohta, J. Ichihara, H. Takasu and S. F. Chichibu, Appl. Phys. Lett. 91, 181903 (2007).
6. H. Sekiguchi, K. Kishino, J. Tanaka, and A. Kikuchi, presented in WS3-B session of IWN 2008, Montreux, Switzerland.
7. R. K. Debnath, R. Meijers, T. Richter, T. Stoica, R. Calarco, and H. Lüth, Appl. Phys. Lett. 90, 123117 (2007) .
8. J. Ristic, E. Calleja, S. Fernández-Garrido, L. Cerutti, A. Trampert, U. Jahn, and K. Ploog, J. Cryst. Growth 310, 4035 (2008).
9. H.-M. Kim, Y.-H. Cho, H. Lee, S.-I, Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, Nano Lett. 4, 1059 (2004).
10. H. Sekiguchi, K. Kishino, and A. Kikuchi, Electron. Lett. 44, 151 (2008).
11. F. Qian, S. Gradecak, Y. Li, C.-Y Wen, and C. M. Lieber, Nano Lett. 5, 2287 (2005).
12. F. Qian, Y. Li, S. Gradecak, H.-G. Park, Y. J. Dong, Y. Ding, Zh. L. Wang, and C. M. Lieber, Nature Mater. 7, 701 (2008).
13. S. D. Hersee, X. Y. Sun, and X. Wang, Nano Lett. 6, 1808 (2006).
14. K. Kishino, S. Sekiguchi, and A. Kikuchi, J. Cryt. Growth 311, 2063 (2009).
15. S. D. Hersee, M. Fairchild, A. K. Rishinaramangalam, M. S. Ferdouos, L. Zhang, P. M. Varangis, B. S. Swartzentruber, and A. A. Talin, Electron. Lett. 45, 75 (2009).
16. S. Fündling, U Soekmen, E. Peiner, T. Wiemann, P. Hinze, U. Jahn, A. Trampert, H. Riechert, A. Bakin, H.-H. Wehmann, and A. Waag, Nanotechnology 19, 405301 (2008).
17. S. Fündling, S. F. Li, U. Soekmen, S. Merzsch, P. Hinze, T. Wiemann, U. Jahn, A. Trampert, H. Riechert, E. Peiner, H.-H. Wehmann, and A. Waag, Phys. Status Solidi A 206, 1194 (2009).
18. K. S. Ramaiah, Y. K. Su, S. J. Chang, F. S. Juang, and C. H. Chen, J. Cryst. Growth 220, 405 (2000).
19. X. Li and J. J. Coleman, Appl. Phy. Lett. 70, 438 (1997).