Growth and Conversion of β-Ga2O3 nanobelts into GaN nanowires via catalyst-free Chemical Vapor Deposition technique

Superlattices and Microstructures

Volumn 54, Issue , 2013, Pages 215-224

  N A, Qahtan ^a   Yam, F K ^a   Hassan, Z ^a   Bououdina, M ^b,c  

^a Nano Optoelectronics Research and Technology Laboratory School of Physics   (Malaysia)

^b UNIVERSITY OF BAHRAIN   (Bahrain)

^c Department of Physics

Author keywords

Ga2O3; GaN; Growth mechanism; Nanowires; Photoluminescence

Indexed keywords

ALUMINUM NITRIDE; AMMONIA; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; FIELD EMISSION MICROSCOPES; III-V SEMICONDUCTORS; NANOBELTS; NANOCATALYSTS; NANOWIRES; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; THERMAL EVAPORATION; X RAY POWDER DIFFRACTION; ZINC SULFIDE;

BAND-EDGE EMISSIONS; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GALLIUM NITRIDE NANOWIRES; HEXAGONAL WURTZITE; SAPPHIRE SUBSTRATES; SCATTERING ANALYSIS; VIBRATIONAL MODES; X-RAY DIFFRACTION SPECTRUM;

GALLIUM NITRIDE;

EID: 84885419279     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2012.11.017     Document Type: Article

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