Vapor-phase growth of high-quality GaN single crystals in crucible by carbothermal reduction and nitridation of Ga2O3

Journal of Crystal Growth

Volumn 310, Issue 3, 2008, Pages 530-535

  Miura, Akira ^a   Shimada, Shiro ^a   Sekiguchi, Takashi ^b   Yokoyama, Masaaki ^c   Mizobuchi, Bunsyo ^d  

^a HOKKAIDO UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c HORIBA LTD   (Japan)

^d Sumitomo Seiko Chemicals Corporation   (Japan)

Author keywords

A1. Crystal morphology; A2. Growth from vapor; B1. Nitride; B1. Oxide; B2. Semiconductor III V materials

Indexed keywords

CARBOTHERMAL REDUCTION; CRYSTAL IMPURITIES; GALLIUM NITRIDE; NITRIDATION; SINGLE CRYSTALS; X RAY CRYSTALLOGRAPHY;

CRYSTAL MORPHOLOGY; CRYSTALLINE GALLIUM NITRIDE; GROWTH FROM VAPORS; PRISMATIC CRYSTALS; VAPOR-PHASE GROWTH;

CRYSTAL GROWTH;

EID: 37849017844     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.068     Document Type: Article

References (22)

1. Nakamura S., Senoh M., Iwasa N., and Nagahama S. Jpn. J. Appl. Phys. 34 (1995) L797
2. Akasaki I. J. Crystal Growth 221 (2000) 231
3. Okumura H. Jpn. Appl. Phys. 45 (2006) 7565
4. Detchprohm T., Xia Y., Xi Y., Zhu M., Zhao W., Li Y., Schubert E.F., Liu L., Tsvetkov D., Hanser D., and Wetzel C. J. Crystal Growth 298 (2007) 272
5. Porowski S., and Grzegory I. J. Crystal Growth 178 (1997) 174
6. Aoki M., Yamane H., Shimada M., Sarayama S., and DiSalvo F.J. Cryst. Design Growth 1 (2001) 119
7. Yamada T., Yamane H., Iwata H., and Sarayama S. J. Crystal Growth 281 (2005) 242
8. Wang B., Callahan M.J., Rakes K.D., Bouthillette L.O., Wang S.Q., Bliss D.F., and Kolis J.W. J. Crystal Growth 287 (2006) 376
9. Motoki K., Okahisa T., Nakahata S., Matsumoto N., Kimura H., Kasai H., Takemoto K., Uematsu K., Ueno M., Kumagai Y., Koukitu A., and Seki H. J. Crystal Growth 237-239 (2002) 912
10. Balkas C.M., Sitar Z., Bergman L., Shmagin I.K., Muth J.F., Kolbas R., Nemanich R.J., and Davis R.F. J. Crystal Growth 208 (2000) 100
11. Akira M., Shimada S., and Sekiguchi T. J. Crystal Growth 299 (2007) 22
12. Peng H.Y., Zhou X.T., Wang N., Zheng Y.F., Liao L.S., Shi W.S., Lee C.S., and Lee S.T. Chem. Phys. Lett. 327 (2000) 263
13. Peng H.Y., Wang N., Zhou X.T., Zheng Y.F., Lee C.S., and Lee S.T. Chem. Phys. Lett. 359 (2002) 241
14. Shimada S., and Ryutaro R. J. Crystal Growth 263 (2004) 1
15. Qiu H., Cao C., Xiang X., Zhang Y., Li J., and Zhu H. J. Crystal Growth 290 (2006) 1
16. Qiu H., Cao C., Li J., Ji F., and Zhu H. J. Crystal Growth 291 (2006) 491
17. Miura A., and Shimada S. Mater. Res. Bull. 41 (2006) 1775
18. Sekiguchi T. Mater. Res. Soc. Symp. Proc. 588 (2000) 75
19. Sekiguchi T., and Leipner H.S. Appl. Phys. Lett. 67 (1995) 3777
20. Prystawko P., Leszczynski M., Beaumont B., Gibart P., Frayssinet E., Knap W., Wisniewski P., Bockowski M., Suski T., and Porowski S. Phys. Stat. Sol. 210 (1998) 437
21. Meister D., Bohm M., Topf M., Kriegseis W., Burkhardt W., Dimstorfer I., Rosel S., Frangis B., Meyer B.K., Hoffmann A., Siegle H., Thomsen C., Christen J., and Bertram F. J. Appl. Phys. 88 (2000) 1881
22. Konkapaka P., Raghothamachar B., Dudley M., Makarov Y., and Spencer M.G. J. Crystal Growth 289 (2006) 140