Effect of ammoniating temperature on microstructure and optical properties of one-dimensional GaN nanowires doped with magnesium

Journal of Alloys and Compounds

Volumn 509, Issue 4, 2011, Pages 1294-1300

  Shi, Feng ^a   Zhang, Dongdong ^a   Xue, Chengshan ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

Ammoniating temperature; Mg doped GaN nanowires; Microstructure; Optical properties

Indexed keywords

AMMONIATING TEMPERATURE; CRYSTALLINE QUALITY; GAN NANOWIRES; GROWTH DIRECTIONS; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; MG THIN FILMS; MG-DOPED; PHOTOLUMINESCENCE SPECTRUM; SCANNING ELECTRON MICROSCOPES; SI (1 1 1); X-RAY PHOTOELECTRON SPECTROSCOPE; XPS;

ELECTRON MICROSCOPES; GALLIUM ALLOYS; GALLIUM NITRIDE; MAGNESIUM; MICROSTRUCTURE; MORPHOLOGY; NANOWIRES; PHOTOELECTRON SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SECONDARY BATTERIES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

OPTICAL PROPERTIES;

EID: 78649327652     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.10.017     Document Type: Article

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