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Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 261-265

Red (1.8 eV) luminescence in epitaxially grown GaN

(9) Hofmann, D M a Meyer, B K a Alves, H a Leiter, F a Burkhard, W a Romanov, N b Kim, Y c Kruger J c Weber, E R c

a JUSTUS LIEBIG UNIVERSITY (Germany)

b IOFFE INSTITUTE (Russian Federation)

c UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON ENERGY LEVELS; MOLECULAR BEAM EPITAXY; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTOR GROWTH;

DEEP CENTERS; GALLIUM NITRIDE; OPTICALLY DETECTED MAGNETIC RESONANCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034230155 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200007)180:1<261::AID-PSSA261>3.0.CO;2-2 Document Type: Article

Times cited : (52)

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