Synthesis and properties of triangular-shaped GaN nanorods via growth mode control

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 490-494

  Kang, S M ^a   Shin, T I ^a   Dihn, D V ^b   Yang, J H ^b   Kim, S W ^c   Yoon, D H ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Kumoh National Institute of Technology   (South Korea)

Author keywords

A1. Crystal morphology; A1. Nanostructures; A3. Chemical vapor deposition processes; B2. Semiconducting III V materials

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON MICROSCOPY; ELECTRONS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; GROWTH (MATERIALS); HIGH RESOLUTION ELECTRON MICROSCOPY; MORPHOLOGY; NANORODS; NANOSTRUCTURES; NITRIDES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; VAPORS; ZINC SULFIDE;

A THERMALS; A1. CRYSTAL MORPHOLOGY; A1. NANOSTRUCTURES; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; AMMONIA GAS; B2. SEMICONDUCTING III-V MATERIALS; BACK-SCATTERED ELECTRONS; FIELD EMISSION-SCANNING ELECTRON MICROSCOPIES; GA METALS; GAN NANORODS; GAN POWDERS; GROWTH MODES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPIES; SAMPLE GEOMETRIES; SECONDARY ELECTRONS; SINGLE-CRYSTALLINE WURTZITE; TRIANGULAR SHAPES; VAPOR LIQUID SOLIDS; VAPOR SOLIDS; WURTZITE; X-RAY SCATTERING MEASUREMENTS;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 59749106403     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.047     Document Type: Article

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