The effect of the aminating temperature on the synthesis of gallium nitride nanowires doped with magnesium

Superlattices and Microstructures

Volumn 45, Issue 6, 2009, Pages 514-519

  Huang, Yinglong ^a   Xue, Chengshan ^a   Zhuang, Huizhao ^a   Sun, Haibo ^a   Zhang, Dongdong ^a   Wang, Ying ^a   Wang, Zouping ^a   Guo, Yongfu ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

Nanofabrications; Nanostructures; Optical properties; Scanning and transmission electron microscopy

Indexed keywords

AMMONIATING TEMPERATURES; BAND-GAP EMISSIONS; BLUE SHIFTS; ENERGY-DISPERSIVE X-RAYS; GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; GROWTH MECHANISMS; GROWTH OF GAN; HIGH-RESOLUTION TEM; LAYERED FILMS; NANOFABRICATIONS; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; SCANNING ELECTRON MICROSCOPES; SI SUBSTRATES; X-RAY DIFFRACTIONS;

DOPING (ADDITIVES); ELECTRIC WIRE; ELECTRON MICROSCOPES; GALLIUM ALLOYS; GALLIUM NITRIDE; GOLD; MAGNESIUM; NANOWIRES; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; SCANNING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SYNTHESIS (CHEMICAL); THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

INTEGRATED OPTOELECTRONICS;

EID: 64949099801     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.12.029     Document Type: Article

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