Studies on the effect of ammonia flow rate induced defects in gallium nitride grown by MOCVD

Journal of Crystal Growth

Volumn 312, Issue 21, 2010, Pages 3151-3155

  Suresh, S ^a   Lourdudoss, S ^b   Landgren, G ^b   Baskar, K ^a  

^a ANNA UNIVERSITY   (India)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

A1. High resolution X ray diffraction; A1. Point defects; A3. Metal organic chemical vapor deposition; B2. Semiconducting IIIV materials

Indexed keywords

A1. POINT DEFECTS; A3. METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; BAND EMISSION; DEEP LEVEL; DISLOCATION DENSITIES; HIGH RESOLUTION X RAY DIFFRACTION; INDUCED DEFECTS; MOCVD; OXYGEN ATOM; ROCKING CURVE WIDTH; SEMI CONDUCTING III-V MATERIALS; TRIMETHYLGALLIUM; V/III RATIO; WET-CHEMICAL ETCHING; X RAY ROCKING CURVE; YELLOW LUMINESCENCE;

AMMONIA; ATOMIC FORCE MICROSCOPY; DEFECTS; DIFFRACTION; GALLIUM ALLOYS; INDUSTRIAL CHEMICALS; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; OXYGEN; POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; WET ETCHING; X RAY DIFFRACTION; X RAYS;

GALLIUM NITRIDE;

EID: 77956884664     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.07.063     Document Type: Article

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