Residual thermal strain in thick GaN epifilms revealed by cross-sectional Raman scattering and cathodoluminescence spectra

Semiconductor Science and Technology

Volumn 22, Issue 8, 2007, Pages 896-899

  Wang, F C ^a   Cheng, C L ^a   Chen, Y F ^a   Huang, C F ^a   Yang, C C ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ENERGY GAP; GALLIUM NITRIDE; INTERFACES (MATERIALS); RAMAN SCATTERING; SEMICONDUCTOR MATERIALS;

EPIFILMS; GROWTH DIRECTION; NITRIDE SEMICONDUCTORS; RESIDUAL THERMAL STRAIN;

THICK FILMS;

EID: 34547407201     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/8/012     Document Type: Article

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