Synthesis and characterization of Zn-doped GaN crystals by simultaneous carbothermal reduction and nitridation of Ga2O3 and ZnO

Journal of Crystal Growth

Volumn 312, Issue 3, 2010, Pages 452-456

  Shimada, Shiro ^a   Otani, Hiroki ^a   Miura, Akira ^b   Sekiguchi, Takashi ^c   Yokoyama, Masaaki ^d  

^a HOKKAIDO UNIVERSITY   (Japan)

^b Cornell University ^*  (United States)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d HORIBA LTD   (Japan)

Author keywords

A1. Doping; A2. Growth from vapor; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

A1. DOPING; A2. GROWTH FROM VAPOR; B1. NITRIDES; GROWTH FROM VAPORS; SEMI CONDUCTING III-V MATERIALS;

CARBOTHERMAL REDUCTION; DOPING (ADDITIVES); GALLIUM NITRIDE; GLASS; INDUCTIVELY COUPLED PLASMA; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; NITRIDATION; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SILICA; SINGLE CRYSTALS; VAPORS; X RAY POWDER DIFFRACTION; ZINC; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 72549094139     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.11.001     Document Type: Article

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