SCOPUS 정보 검색 플랫폼

RSC Advances

Volumn 2, Issue 11, 2012, Pages 4802-4806

Interplay of VLS and VS growth mechanism for GaN nanowires by a self-catalytic approach

(3) Purushothaman, V a Ramakrishnan, V b Jeganathan, K a

a BHARATHIDASAN UNIVERSITY (India)

b MADURAI KAMARAJ UNIVERSITY (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOUR DEPOSITION; GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; GROWTH MECHANISMS; GROWTH MODES; ONE-DIMENSIONAL STRUCTURE; OPTICAL QUALITIES; REACTOR PRESSURES; REDUCED PRESSURE; SELF-CATALYTIC; VAPOR-LIQUID-SOLID MECHANISM;

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; LIQUIDS; NANOWIRES;

VAPORS;

EID: 84861350642 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c2ra01000c Document Type: Article

Times cited : (41)

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