Synthesis and characterization of GaN nanowires

Applied Surface Science

Volumn 255, Issue 17, 2009, Pages 7719-7722

  Wang, Ying ^a   Xue, Chengshan ^a   Zhuang, Huizhao ^a   Wang, Zouping ^a   Zhang, Dongdong ^a   Huang, Yinglong ^a   Liu, Wenjun ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

CVD; Nanowires; XRD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; CRYSTAL STRUCTURE; FLOW OF GASES; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; X RAY DIFFRACTION; ZINC SULFIDE;

CHEMICAL VAPOR DEPOSITION METHODS; GAN NANOWIRES; GROWTH MECHANISMS; HEXAGONAL WURTZITE STRUCTURE; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; PHOTOLUMINESCENCE SPECTRUM; SI SUBSTRATES; SYNTHESIS AND CHARACTERIZATIONS;

NICKEL COMPOUNDS;

EID: 66049157183     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.04.147     Document Type: Article

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