Synthesis of GaN nanowires and nanorods via self-growth mode control

Microelectronics Journal

Volumn 40, Issue 2, 2009, Pages 373-376

  Kang, S M ^a   Shin, T I ^a   Dinh, Duc V ^b   Yang, J H ^b   Kim, S W ^c   Yoon, D H ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Kumoh National Institute of Technology   (South Korea)

Author keywords

Gallium nitride nanostructures; Vapor liquid solid; Vapor solid

Indexed keywords

CARBON NANOTUBES; CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; ELECTRIC WIRE; EMISSION SPECTROSCOPY; FIELD EMISSION; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; GROWTH (MATERIALS); NANOSTRUCTURES; NANOWIRES; NITRIDES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; VAPORS;

A THERMALS; AMMONIA GAS; DEEP-LEVEL EMISSIONS; FIELD EMISSION-SCANNING ELECTRON MICROSCOPIES; GA METALS; GALLIUM NITRIDE NANOSTRUCTURES; GAN NANOSTRUCTURES; GAN NANOWIRES; GAN POWDERS; GROWTH MODES; GROWTH TIME; ONE-DIMENSIONAL; OXIDE PHASIS; VAPOR-LIQUID-SOLID; VAPOR-SOLID; WURZITE; X-RAY SCATTERING MEASUREMENTS;

NANORODS;

EID: 59049099844     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.07.027     Document Type: Article

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